IRIS
Verzellesi, Giovanni
 Distribuzione geografica
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Continente #
NA - Nord America 5.938
AS - Asia 1.673
EU - Europa 1.288
SA - Sud America 353
Continente sconosciuto - Info sul continente non disponibili 53
AF - Africa 42
OC - Oceania 1
Totale 9.348
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Nazione #
US - Stati Uniti d'America 5.831
SG - Singapore 680
CN - Cina 353
VN - Vietnam 329
BR - Brasile 294
RU - Federazione Russa 233
UA - Ucraina 202
SE - Svezia 175
FI - Finlandia 144
GB - Regno Unito 119
DE - Germania 94
HK - Hong Kong 83
IT - Italia 78
FR - Francia 72
CA - Canada 65
LV - Lettonia 62
KR - Corea 50
BG - Bulgaria 38
BD - Bangladesh 30
IN - India 27
TR - Turchia 23
MX - Messico 20
JP - Giappone 18
ZA - Sudafrica 16
CO - Colombia 15
AR - Argentina 14
PL - Polonia 14
IQ - Iraq 13
NL - Olanda 13
PH - Filippine 10
ES - Italia 8
LT - Lituania 8
VE - Venezuela 8
CL - Cile 7
ID - Indonesia 7
PK - Pakistan 7
MA - Marocco 6
TN - Tunisia 6
UZ - Uzbekistan 6
EC - Ecuador 5
EU - Europa 5
RO - Romania 5
SA - Arabia Saudita 5
TH - Thailandia 5
AZ - Azerbaigian 4
BE - Belgio 4
EG - Egitto 4
IE - Irlanda 4
JM - Giamaica 4
JO - Giordania 4
KZ - Kazakistan 4
PY - Paraguay 4
AT - Austria 3
BB - Barbados 3
DZ - Algeria 3
GT - Guatemala 3
HN - Honduras 3
IL - Israele 3
LB - Libano 3
MY - Malesia 3
TT - Trinidad e Tobago 3
UY - Uruguay 3
BO - Bolivia 2
CH - Svizzera 2
HR - Croazia 2
HU - Ungheria 2
KE - Kenya 2
NG - Nigeria 2
NI - Nicaragua 2
PT - Portogallo 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BS - Bahamas 1
BZ - Belize 1
CR - Costa Rica 1
CW - ???statistics.table.value.countryCode.CW??? 1
CZ - Repubblica Ceca 1
EE - Estonia 1
LY - Libia 1
MN - Mongolia 1
MO - Macao, regione amministrativa speciale della Cina 1
MU - Mauritius 1
OM - Oman 1
PA - Panama 1
PE - Perù 1
PS - Palestinian Territory 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
SX - ???statistics.table.value.countryCode.SX??? 1
Totale 9.302
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Città #
Ashburn 607
Fairfield 529
Chandler 456
Singapore 448
Jacksonville 417
Ann Arbor 315
Woodbridge 260
San Jose 247
Seattle 215
Wilmington 204
Houston 180
Cambridge 170
Santa Clara 159
Columbus 158
Dallas 134
San Mateo 120
Moscow 109
Princeton 107
Los Angeles 103
New York 100
The Dalles 98
Beijing 89
Ho Chi Minh City 86
Helsinki 78
Hong Kong 74
Hanoi 70
Riga 62
Boardman 60
Council Bluffs 56
Seoul 49
Lauterbourg 47
Phoenix 39
Sofia 38
Dearborn 36
Orem 35
Dong Ket 31
Munich 28
San Diego 28
Atlanta 24
Hefei 24
São Paulo 24
Chicago 22
London 22
Buffalo 19
Toronto 19
Izmir 18
Lawrence 18
Montreal 18
Haiphong 16
Tokyo 15
Bremen 14
Da Nang 14
Denver 14
Stockholm 14
Johannesburg 13
Rio de Janeiro 13
Frankfurt am Main 12
Trento 12
Warsaw 12
Amsterdam 10
Brooklyn 10
Düsseldorf 10
Milan 10
Redondo Beach 10
Chennai 9
Falkenstein 9
Guangzhou 9
Poplar 9
Washington 9
Baghdad 8
Boston 8
Ottawa 8
Shanghai 8
Bắc Ninh 7
Costa Mesa 7
Nanjing 7
Turku 7
Verona 7
Hillsboro 6
Manchester 6
Mumbai 6
Norwalk 6
Querétaro 6
Tampa 6
Tashkent 6
Zhengzhou 6
Belo Horizonte 5
Bogotá 5
Canary Wharf 5
Curitiba 5
Dhaka 5
Hangzhou 5
Huế 5
Jinan 5
Kunming 5
Paris 5
Rome 5
Salvador 5
Santiago 5
Shenzhen 5
Totale 6.679
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Nome #
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 294
A 2.4-GHz wireless alpha-ray sensor for remote monitoringand spectroscopy 215
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 209
A 180-nm CMOS Time-of-Flight 3-D Image Sensor 202
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 193
Beam test results for the SuperB-SVT thin striplet detector 189
A test chip for the development of PIN- type silicon radiation detectors 188
The PixFEL front-end for X-ray imaging in the radiation environment of next generation FELs 187
The front-end chip of the SuperB SVT detector 184
Development of a detector-compatible JFET technology on high-resistivity silicon 183
Design and optimization of an npn silicon bipolar phototransistor for optical position encoders 182
Compact Modeling of n-side interstrip resistance in p-stop and p-spray isolated double-sided silicon microstrip detectors 180
An all-p-type termination structure for silicon microstrip detectors 179
Asymmetrical oxide-charge build-up in irradiated p-MOSFET's 173
First experimental results on active and slim-edge silicon sensors for XFEL 173
Development of silicon micro-heaters for chemoresistive gas sensors 171
N-p-n bipolar-junction-transistor detector with integrated p-n-p biasing transistor - feasibility study, design and first experimental results 168
PixFEL: Development of an X-ray diffraction imager for future FEL applications 166
BJT-based detector on high-resistivity silicon with integrated biasing structure 165
BJT detector with FPGA-based read-out for alpha particle monitoring 162
PFM2: A 32×32 readout chip for the PixFEL X-ray imager demonstrator 162
An improved all-p-type multiguard termination structure for silicon radiation detectors 161
Breakdown properties of multiguarded devices 161
Performance of a radon sensor based on a BJT detector on high-resistivity silicon 161
Analytical model for the ohmic-side interstrip resistance of double-sided silicon microstrip detectors 159
Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET 157
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 156
Radiation effects on breakdown characteristics of multiguarded devices 155
Monolithic integration of detectors and transistors in high-resistivity silicon 155
Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector 154
A Novel Silicon Microstrip Termination Structure with All-P-Type Multiguard and Scribe-Line Implants 153
Self-limitation of edge-generated currents in single-sided microstrip detectors after type inversion 152
Study of breakdown effects in silicon multiguard structures 149
Forward and reverse characteristics of irradiated MOSFET's 148
An npn bipolar phototransistor for optical encoders 147
TOF-Range Image Sensor in 0.18 um CMOS Technology based on Current Assisted Photonic Demodulators 147
PFM2: A 32 × 32 processor for X-ray diffraction imaging at FELs 146
Laser and alpha particle characterization of floating-base BJT detector 144
High voltage operation of silicon devices for LHC experiments 133
Dispositivo per la ripresa di immagini 3D basato su tecnologia CMOS 180nm e telemetria a modulazione sinusoidale 132
Design and Characterization of Current-Assisted Photonic Demodulators in 0.18-μm CMOS Technology 132
Development of deep N-well monolithic active pixel sensors in a 0.13um CMOS technology 131
Si-PIN X-ray detector technology 130
N-channel JFET on high- resistivity silicon for on- chip read-out electronics of radiation detectors 130
Spice modelling of impact ionisation effects in silicon bipolar transistors 128
Development of 130nm CMOS Monolithic Active Pixels with In-pixel Signal Processing 125
A low leakage process for silicon radiation detectors 124
Extraction of bulk and surface generation lifetimes in high resistivity silicon by means of gated diodes 123
The SuperB Silicon Vertex Tracker 122
Study of breakdown effects in silicon multiguard structures 120
Silicon PIN radiation detectors with on-chip front-end junction field effect transistor 119
Optimisation of multiguard structures for breakdown protection in silicon detectors 118
Performance evaluation of radiation sensors with internal signal amplification based on the BJT effect 117
Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics 116
Thermo-Mechanical analysis of microstructures for chemoresistive gas sensors 115
Design of an n- channel JFET on high- resistivity silicon for radiation-detector on-chip fron-end electronics 114
Multiguard structures for high voltage operation of radiation damaged silicon detectors 108
Two-dimensional numerical simulation of edge-generated currents in type inverted,p+-n single sided silicon microstrip detecctors 105
Modeling Of Light-Addressable Potentiometric Sensors 105
On the accuracy of generation lifetime measurements in high-resistivity silicon using PN gated diodes 101
Gate-length dependence of bulk generation lifetime and surface generation velocity measurements in high-resistivity silicon using gated diodes 88
Monolithic integration of PIN diodes and n-channel double-gate JFETs for room temperature X-ray spectroscopy 82
Totale 9.348
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Categoria #
all - tutte 34.857
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 34.857
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022513 0 0 0 74 8 29 16 142 21 78 34 111
2022/2023890 117 77 8 141 113 147 0 60 117 6 58 46
2023/2024310 21 23 30 14 31 92 19 27 3 10 2 38
2024/20251.182 8 6 77 177 84 154 12 92 76 273 90 133
2025/20262.807 236 40 310 553 299 239 605 37 171 199 55 63
2026/2027569 55 120 317 77 0 0 0 0 0 0 0 0
Totale 9.348