IRIS
Verzellesi, Giovanni
 Distribuzione geografica
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Continente #
NA - Nord America 5.474
AS - Asia 1.657
EU - Europa 1.269
SA - Sud America 334
AF - Africa 41
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 1
Totale 8.783
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Nazione #
US - Stati Uniti d'America 5.384
SG - Singapore 678
CN - Cina 352
VN - Vietnam 329
BR - Brasile 286
RU - Federazione Russa 233
UA - Ucraina 202
SE - Svezia 175
FI - Finlandia 144
GB - Regno Unito 116
DE - Germania 93
HK - Hong Kong 83
FR - Francia 70
IT - Italia 67
CA - Canada 63
LV - Lettonia 62
KR - Corea 50
BG - Bulgaria 38
BD - Bangladesh 27
IN - India 26
TR - Turchia 22
JP - Giappone 18
ZA - Sudafrica 16
MX - Messico 15
PL - Polonia 14
AR - Argentina 13
IQ - Iraq 13
NL - Olanda 13
CO - Colombia 9
ES - Italia 8
CL - Cile 7
ID - Indonesia 7
LT - Lituania 7
PH - Filippine 7
MA - Marocco 6
PK - Pakistan 6
TN - Tunisia 6
UZ - Uzbekistan 6
VE - Venezuela 6
EU - Europa 5
RO - Romania 5
AZ - Azerbaigian 4
BE - Belgio 4
EG - Egitto 4
IE - Irlanda 4
JO - Giordania 4
KZ - Kazakistan 4
PY - Paraguay 4
SA - Arabia Saudita 4
TH - Thailandia 4
AT - Austria 3
DZ - Algeria 3
EC - Ecuador 3
HN - Honduras 3
IL - Israele 3
UY - Uruguay 3
BB - Barbados 2
BO - Bolivia 2
CH - Svizzera 2
GT - Guatemala 2
HU - Ungheria 2
JM - Giamaica 2
KE - Kenya 2
LB - Libano 2
MY - Malesia 2
NG - Nigeria 2
PT - Portogallo 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BZ - Belize 1
CR - Costa Rica 1
CW - ???statistics.table.value.countryCode.CW??? 1
CZ - Repubblica Ceca 1
EE - Estonia 1
HR - Croazia 1
MN - Mongolia 1
MO - Macao, regione amministrativa speciale della Cina 1
MU - Mauritius 1
OM - Oman 1
PA - Panama 1
PE - Perù 1
PS - Palestinian Territory 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
SX - ???statistics.table.value.countryCode.SX??? 1
Totale 8.783
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Città #
Ashburn 583
Fairfield 529
Chandler 456
Singapore 446
Jacksonville 415
Ann Arbor 315
Woodbridge 260
Seattle 215
Wilmington 202
San Jose 197
Houston 177
Cambridge 170
Santa Clara 153
Dallas 132
San Mateo 120
Columbus 118
Moscow 109
Princeton 107
The Dalles 98
New York 97
Los Angeles 96
Beijing 89
Ho Chi Minh City 86
Helsinki 78
Hong Kong 74
Hanoi 70
Riga 62
Boardman 60
Seoul 49
Lauterbourg 47
Sofia 38
Dearborn 36
Orem 35
Dong Ket 31
Munich 28
San Diego 28
Hefei 24
Atlanta 22
London 22
São Paulo 21
Izmir 18
Lawrence 18
Toronto 18
Buffalo 17
Montreal 17
Haiphong 16
Chicago 15
Tokyo 15
Bremen 14
Da Nang 14
Stockholm 14
Johannesburg 13
Rio de Janeiro 13
Warsaw 12
Frankfurt am Main 11
Phoenix 11
Amsterdam 10
Brooklyn 10
Denver 10
Düsseldorf 10
Redondo Beach 10
Chennai 9
Falkenstein 9
Guangzhou 9
Poplar 9
Baghdad 8
Boston 8
Ottawa 8
Trento 8
Washington 8
Bắc Ninh 7
Costa Mesa 7
Milan 7
Nanjing 7
Shanghai 7
Turku 7
Verona 7
Council Bluffs 6
Hillsboro 6
Manchester 6
Norwalk 6
Querétaro 6
Tashkent 6
Zhengzhou 6
Belo Horizonte 5
Canary Wharf 5
Curitiba 5
Hangzhou 5
Huế 5
Jinan 5
Kunming 5
Mumbai 5
Paris 5
Rome 5
Salvador 5
Santiago 5
Shenzhen 5
Tampa 5
Thái Nguyên 5
Vancouver 5
Totale 6.428
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Nome #
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 283
A 2.4-GHz wireless alpha-ray sensor for remote monitoringand spectroscopy 205
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 203
A 180-nm CMOS Time-of-Flight 3-D Image Sensor 192
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 182
A test chip for the development of PIN- type silicon radiation detectors 182
The PixFEL front-end for X-ray imaging in the radiation environment of next generation FELs 180
Beam test results for the SuperB-SVT thin striplet detector 177
Compact Modeling of n-side interstrip resistance in p-stop and p-spray isolated double-sided silicon microstrip detectors 176
Development of a detector-compatible JFET technology on high-resistivity silicon 175
The front-end chip of the SuperB SVT detector 175
Design and optimization of an npn silicon bipolar phototransistor for optical position encoders 174
An all-p-type termination structure for silicon microstrip detectors 172
First experimental results on active and slim-edge silicon sensors for XFEL 166
Development of silicon micro-heaters for chemoresistive gas sensors 164
Asymmetrical oxide-charge build-up in irradiated p-MOSFET's 163
PFM2: A 32×32 readout chip for the PixFEL X-ray imager demonstrator 160
Breakdown properties of multiguarded devices 158
PixFEL: Development of an X-ray diffraction imager for future FEL applications 157
An improved all-p-type multiguard termination structure for silicon radiation detectors 156
BJT-based detector on high-resistivity silicon with integrated biasing structure 156
N-p-n bipolar-junction-transistor detector with integrated p-n-p biasing transistor - feasibility study, design and first experimental results 154
Performance of a radon sensor based on a BJT detector on high-resistivity silicon 154
BJT detector with FPGA-based read-out for alpha particle monitoring 153
Analytical model for the ohmic-side interstrip resistance of double-sided silicon microstrip detectors 150
Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET 150
Self-limitation of edge-generated currents in single-sided microstrip detectors after type inversion 146
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 145
Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector 145
Radiation effects on breakdown characteristics of multiguarded devices 145
Study of breakdown effects in silicon multiguard structures 142
Monolithic integration of detectors and transistors in high-resistivity silicon 141
Forward and reverse characteristics of irradiated MOSFET's 140
An npn bipolar phototransistor for optical encoders 138
A Novel Silicon Microstrip Termination Structure with All-P-Type Multiguard and Scribe-Line Implants 138
PFM2: A 32 × 32 processor for X-ray diffraction imaging at FELs 138
TOF-Range Image Sensor in 0.18 um CMOS Technology based on Current Assisted Photonic Demodulators 134
Laser and alpha particle characterization of floating-base BJT detector 132
High voltage operation of silicon devices for LHC experiments 129
Design and Characterization of Current-Assisted Photonic Demodulators in 0.18-μm CMOS Technology 126
Development of deep N-well monolithic active pixel sensors in a 0.13um CMOS technology 125
Si-PIN X-ray detector technology 123
Dispositivo per la ripresa di immagini 3D basato su tecnologia CMOS 180nm e telemetria a modulazione sinusoidale 123
N-channel JFET on high- resistivity silicon for on- chip read-out electronics of radiation detectors 122
Spice modelling of impact ionisation effects in silicon bipolar transistors 120
A low leakage process for silicon radiation detectors 118
Development of 130nm CMOS Monolithic Active Pixels with In-pixel Signal Processing 118
The SuperB Silicon Vertex Tracker 116
Study of breakdown effects in silicon multiguard structures 113
Extraction of bulk and surface generation lifetimes in high resistivity silicon by means of gated diodes 110
Silicon PIN radiation detectors with on-chip front-end junction field effect transistor 109
Optimisation of multiguard structures for breakdown protection in silicon detectors 108
Thermo-Mechanical analysis of microstructures for chemoresistive gas sensors 108
Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics 108
Design of an n- channel JFET on high- resistivity silicon for radiation-detector on-chip fron-end electronics 107
Performance evaluation of radiation sensors with internal signal amplification based on the BJT effect 105
Multiguard structures for high voltage operation of radiation damaged silicon detectors 103
Modeling Of Light-Addressable Potentiometric Sensors 97
Two-dimensional numerical simulation of edge-generated currents in type inverted,p+-n single sided silicon microstrip detecctors 96
On the accuracy of generation lifetime measurements in high-resistivity silicon using PN gated diodes 92
Gate-length dependence of bulk generation lifetime and surface generation velocity measurements in high-resistivity silicon using gated diodes 77
Monolithic integration of PIN diodes and n-channel double-gate JFETs for room temperature X-ray spectroscopy 75
Totale 8.829
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Categoria #
all - tutte 32.815
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 32.815
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022600 14 70 3 74 8 29 16 142 21 78 34 111
2022/2023890 117 77 8 141 113 147 0 60 117 6 58 46
2023/2024310 21 23 30 14 31 92 19 27 3 10 2 38
2024/20251.182 8 6 77 177 84 154 12 92 76 273 90 133
2025/20262.807 236 40 310 553 299 239 605 37 171 199 55 63
2026/202750 50 0 0 0 0 0 0 0 0 0 0 0
Totale 8.829