A readout chip, consisting of 32×32 square cells, has been designed in a 65 nm CMOS technology. The circuit will be bump bonded to a slim/active edge pixel sensor to form the first demonstrator for the PixFEL X-ray imager, envisaged for applications to experiments at the next generation X-ray FELs. The pixel pitch is 110 μm, for a total area of about 16 mm2. Different solutions for the readout channel, which includes a charge preamplifier, a time-variant filter and a 10 bit ADC, have been integrated in the chip. In particular, a couple of different versions for the time-variant processor have been implemented. The charge preamplifier is provided with four different gain settings, therefore improving the system capability to comply with photon energies in the 1 keV to 10 keV interval. This work, besides discussing in detail the readout channel and array architecture, will present the first results from the chip characterization.
PFM2: A 32×32 readout chip for the PixFEL X-ray imager demonstrator / Ratti, L., Comotti, D., Fabris, L., Grassi, M., Lodola, L., Malcovati, P., Manghisoni, M., Re, V., Traversi, G., Vacchi, C., Batignani, G., Bettarini, S., Casarosa, G., Forti, F., Morsani, F., Paladino, A., Paoloni, E., Rizzo, G., Benkechkache, M.A., Dalla Betta, G.-F., et al.. - ELETTRONICO. - 2017-:(2017), pp. 1-5. (2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016 Strasburgo, Francia 2016) [10.1109/NSSMIC.2016.8069724].
PFM2: A 32×32 readout chip for the PixFEL X-ray imager demonstrator
Dalla Betta, G. -F.;Mendicino, R.;Pancheri, L.;Verzellesi, G.;Xu, H.
2017-01-01
Abstract
A readout chip, consisting of 32×32 square cells, has been designed in a 65 nm CMOS technology. The circuit will be bump bonded to a slim/active edge pixel sensor to form the first demonstrator for the PixFEL X-ray imager, envisaged for applications to experiments at the next generation X-ray FELs. The pixel pitch is 110 μm, for a total area of about 16 mm2. Different solutions for the readout channel, which includes a charge preamplifier, a time-variant filter and a 10 bit ADC, have been integrated in the chip. In particular, a couple of different versions for the time-variant processor have been implemented. The charge preamplifier is provided with four different gain settings, therefore improving the system capability to comply with photon energies in the 1 keV to 10 keV interval. This work, besides discussing in detail the readout channel and array architecture, will present the first results from the chip characterization.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
