IRIS
Pignatel, Giorgio Umberto
 Distribuzione geografica
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Continente #
NA - Nord America 2.836
EU - Europa 602
AS - Asia 237
Continente sconosciuto - Info sul continente non disponibili 6
AF - Africa 2
Totale 3.683
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Nazione #
US - Stati Uniti d'America 2.830
UA - Ucraina 204
SG - Singapore 143
SE - Svezia 124
FI - Finlandia 90
CN - Cina 79
GB - Regno Unito 54
IT - Italia 41
BG - Bulgaria 27
DE - Germania 21
RU - Federazione Russa 18
TR - Turchia 9
EU - Europa 6
NL - Olanda 6
CA - Canada 5
ES - Italia 4
RO - Romania 3
AT - Austria 2
CZ - Repubblica Ceca 2
FR - Francia 2
CI - Costa d'Avorio 1
DO - Repubblica Dominicana 1
EG - Egitto 1
HR - Croazia 1
IE - Irlanda 1
IL - Israele 1
IN - India 1
IR - Iran 1
JP - Giappone 1
PK - Pakistan 1
PT - Portogallo 1
SK - Slovacchia (Repubblica Slovacca) 1
UZ - Uzbekistan 1
Totale 3.683
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Città #
Jacksonville 402
Fairfield 340
Chandler 315
Ann Arbor 204
Woodbridge 181
Ashburn 160
Seattle 148
Wilmington 140
Cambridge 111
Singapore 107
Houston 101
Columbus 99
Princeton 92
San Mateo 78
Beijing 45
New York 43
Helsinki 38
Boardman 34
Sofia 27
Dearborn 22
San Diego 18
Lawrence 14
Vicenza 11
London 10
Moscow 10
Düsseldorf 9
Izmir 9
Los Angeles 8
Milan 7
Norwalk 7
Kunming 6
Santa Clara 6
Dallas 5
Falls Church 5
Nanjing 5
Des Moines 4
Hefei 4
Phoenix 4
Amsterdam 3
Atlanta 3
Brooklyn 3
Chongqing 3
Fremont 3
Hanover 3
Kirkland 3
North Bergen 3
Rescaldina 3
Shanghai 3
Toronto 3
Trento 3
Andover 2
Chengdu 2
Costa Mesa 2
Dormagen 2
Ibiza Town 2
Las Vegas 2
Perugia 2
San Jose 2
Shenyang 2
Timisoara 2
Uggiate 2
Vienna 2
Abidjan 1
Alcalá De Henares 1
Augusta 1
Barnaul 1
Bratislava 1
Cairo 1
Castelfiorentino 1
Dublin 1
Duluth 1
Fuzhou 1
Guangzhou 1
Hamilton 1
Jinan 1
Kherson 1
Madrid 1
Montréal 1
Munich 1
Nanchang 1
Old Bridge 1
Pesaro 1
Philadelphia 1
Redmond 1
Reston 1
Santa Venerina 1
Santiago de los Caballeros 1
Stanford 1
Taiyuan 1
Tashkent 1
Trumbull 1
Verona 1
Washington 1
Zagreb 1
Totale 2.921
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Nome #
Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon 111
Development of the First Prototypes of Silicon PhotoMultiplier (SiPM) at ITC-IRST 107
PIN diode and integrated JFET on high resistivity silicon: a new test structure 106
An improved PIN photodetector with integrated JFET on high-resistivity silicon 102
Time Resolving Characteristics of HPK and FBK Silicon Photomultipliers for TOF and PET Applications 101
Thermal and Electrical Characterization of Silicon Photomultiplier 100
Compact Modeling of n-side interstrip resistance in p-stop and p-spray isolated double-sided silicon microstrip detectors 97
Si-PIN X-ray detector technology 96
Development of radiation hard silicon detectors: the SMART project 96
A modular prototype detector for scintimammography imaging 95
A test chip for the development of PIN- type silicon radiation detectors 93
Self-limitation of edge-generated currents in single-sided microstrip detectors after type inversion 91
Analytical model for the ohmic-side interstrip resistance of double-sided silicon microstrip detectors 91
Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET 90
Development of silicon micro-heaters for chemoresistive gas sensors 89
Design and optimization of an npn silicon bipolar phototransistor for optical position encoders 89
A functionally reconfigurable detector head for scintimammography 87
Development of a prototype detector for use in scintimammography imaging 85
Development of a prototype detector for use in scintimammography imaging 84
Feasibility study of double-sided silicon microstrip detector fabrication at IRST 83
Development of a detector-compatible JFET technology on high-resistivity silicon 82
Fabrication of microstrip detectors and integrated electronics on high resistivity silicon 81
Development of a fabrication technology for silicon microstrip detectors with integrated electronics 79
Progress on the development of a silicon–carbon nanotube photodetector 79
Analysis of breakdown behaviour of stacked dielectric capacitors for AC-coupled Si microstrip detectors 72
Evaluation of silicon detectors with integrated JFET for biomedical applications 72
On-Chip Tetrode JFET for RT X-Ray Spectroscopy: New Results 69
An npn bipolar phototransistor for optical encoders 64
Feasibility studies of microelectrode silicon detectors with integrated electronics 63
Characterization of a Gamma-Ray Detection System Based on a CsI(Tl) Scintillator Coupled to a Silicon PiN Diode 62
Design and characterization of integrated transistors in a micro-strip detector technology 61
N-channel JFET on high- resistivity silicon for on- chip read-out electronics of radiation detectors 61
Design of an n- channel JFET on high- resistivity silicon for radiation-detector on-chip fron-end electronics 60
Rivelatori di radiazioni su silicio ad alta resistivitÓ 58
Two-dimensional numerical simulation of edge-generated currents in type inverted,p+-n single sided silicon microstrip detecctors 58
On the accuracy of generation lifetime measurements in high-resistivity silicon using PN gated diodes 57
Fotodiodi PIN in silicio per imaging con raggi X 55
Materiali e tecnologie per la realizzazione di rivelatori per fisica nucleare 52
Materials and fabrication technologies for nuclear radiation detectors 52
Extraction of bulk and surface generation lifetimes in high resistivity silicon by means of gated diodes 49
A low leakage process for silicon radiation detectors 49
First results on double- sided AC-coupled Si strip detectors 47
A fabrication process for silicon microstrip detectors with integrated electronics 47
Monolithic integration of PIN diodes and n-channel double-gate JFETs for room temperature X-ray spectroscopy 47
Recent developments in silicon radiation detectors at IRST 46
Silicon integrated microcalorimeters 46
Silicon PIN radiation detectors with on-chip front-end junction field effect transistor 43
Thermo-Mechanical analysis of microstructures for chemoresistive gas sensors 43
Development of silicon active pixel sensors for radio-isotopic molecular imaging 42
Silicon bulk micromachining for sensor technologies 38
Gate-length dependence of bulk generation lifetime and surface generation velocity measurements in high-resistivity silicon using gated diodes 37
Electro-optical characterization of high-speed silicon PIN photodiodes 37
Totale 3.701
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Categoria #
all - tutte 13.860
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.860
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020743 0 0 0 0 106 103 187 65 116 51 39 76
2020/2021588 32 95 9 78 64 41 60 29 59 26 68 27
2021/2022455 7 64 2 56 7 19 10 102 24 54 20 90
2022/2023634 90 48 1 88 96 104 18 43 84 8 24 30
2023/2024174 13 22 13 6 15 50 12 10 0 2 6 25
2024/2025264 5 1 47 183 28 0 0 0 0 0 0 0
Totale 3.701