The extended x-ray absorption fine structure (EXAFS) has been measured at both the K edges of cadmium and tellurium in CdTe, from liquid helium to room temperature, in order to investigate the local thermodynamic behaviour. The temperature dependences of the structural parameters obtained from the separate analysis of the two edges are perfectly consistent. The positive contribution to the thermal expansion due to the bond stretching and the negative contribution due to the tension effects are disentangled and quantified in terms of the bond thermal expansion and the perpendicular mean square relative displacement. The comparison with previous EXAFS results for Ge and CuCl shows that relevant correlations can be established between a number of local parameters measured by means of EXAFS and the properties of the lattice negative thermal expansion of tetrahedrally bonded semiconductors. The effective force constants derived from the EXAFS are compared with the force constants of a valence force field model.

Negative thermal expansion in crystals with the zincblende structure: an EXAFS study of CdTe

Dalba, Giuseppe;Fornasini, Paolo;Grisenti, Rolly;Vaccari, Marco
2012-01-01

Abstract

The extended x-ray absorption fine structure (EXAFS) has been measured at both the K edges of cadmium and tellurium in CdTe, from liquid helium to room temperature, in order to investigate the local thermodynamic behaviour. The temperature dependences of the structural parameters obtained from the separate analysis of the two edges are perfectly consistent. The positive contribution to the thermal expansion due to the bond stretching and the negative contribution due to the tension effects are disentangled and quantified in terms of the bond thermal expansion and the perpendicular mean square relative displacement. The comparison with previous EXAFS results for Ge and CuCl shows that relevant correlations can be established between a number of local parameters measured by means of EXAFS and the properties of the lattice negative thermal expansion of tetrahedrally bonded semiconductors. The effective force constants derived from the EXAFS are compared with the force constants of a valence force field model.
2012
N., Abd el All; Dalba, Giuseppe; D., Diop; Fornasini, Paolo; Grisenti, Rolly; O., Mathon; F., Rocca; B., Thiodjio Sendja; Vaccari, Marco
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11572/90657
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 31
  • ???jsp.display-item.citation.isi??? 28
social impact