Low-Gain Avalanche Diodes (LGAD) are silicon detectors with output signals that are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how the design of LGAD can be optimized to exploit their increased output signal to reach optimum timing performances. Our simulations show that these sensors, the so-called Ultra-Fast Silicon Detectors (UFSD), will be able to reach a time resolution factor of 10 better than that of traditional silicon sensors.
Design optimization of ultra-fast silicon detectors / Cartiglia, N., Arcidiacono, R., Baselga, M., Bellan, R., Boscardin, M., Cenna, F., Dalla Betta, G.F., Fernandez Martnez, P., Ferrero, M., Flores, D., Galloway, Z., Greco, V., Hidalgo, S., Marchetto, F., Monaco, V., Obertino, M., Pancheri, L., Paternoster, G., Picerno, A., Pellegrini, G., et al.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 796:(2015), pp. 141-148. [10.1016/j.nima.2015.04.025]
Design optimization of ultra-fast silicon detectors
Dalla Betta, Gian Franco;Pancheri, Lucio;
2015-01-01
Abstract
Low-Gain Avalanche Diodes (LGAD) are silicon detectors with output signals that are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how the design of LGAD can be optimized to exploit their increased output signal to reach optimum timing performances. Our simulations show that these sensors, the so-called Ultra-Fast Silicon Detectors (UFSD), will be able to reach a time resolution factor of 10 better than that of traditional silicon sensors.| File | Dimensione | Formato | |
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NIMA2015_3.pdf
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UFSD_NIMA_2015.pdf
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