Paccagnella, Alessandro
 Distribuzione geografica
Continente #
NA - Nord America 942
EU - Europa 223
AS - Asia 198
SA - Sud America 41
AF - Africa 2
Totale 1.406
Nazione #
US - Stati Uniti d'America 930
SG - Singapore 120
RU - Federazione Russa 58
CN - Cina 54
UA - Ucraina 44
BR - Brasile 35
FI - Finlandia 30
SE - Svezia 30
DE - Germania 15
GB - Regno Unito 12
LV - Lettonia 11
IT - Italia 10
CA - Canada 9
VN - Vietnam 7
BG - Bulgaria 6
HK - Hong Kong 4
IN - India 4
PL - Polonia 4
BD - Bangladesh 3
IQ - Iraq 3
MX - Messico 3
PY - Paraguay 2
SK - Slovacchia (Repubblica Slovacca) 2
VE - Venezuela 2
AM - Armenia 1
AR - Argentina 1
CL - Cile 1
JP - Giappone 1
KE - Kenya 1
LT - Lituania 1
UZ - Uzbekistan 1
ZA - Sudafrica 1
Totale 1.406
Città #
Ashburn 136
Fairfield 88
Chandler 87
Jacksonville 86
Singapore 82
Ann Arbor 47
Dallas 47
Woodbridge 42
Wilmington 36
Houston 34
Seattle 34
Santa Clara 28
San Mateo 23
Cambridge 21
Princeton 21
Columbus 20
Moscow 17
Beijing 16
Helsinki 14
New York 11
Riga 11
Boardman 10
Los Angeles 7
Washington 7
Sofia 6
Ho Chi Minh City 5
Munich 5
Redondo Beach 5
Turku 5
Buffalo 4
Chicago 4
Dearborn 4
Falkenstein 4
Hong Kong 4
Rio de Janeiro 4
San Diego 4
São Paulo 4
Atlanta 3
Montreal 3
Stockholm 3
The Dalles 3
Toronto 3
Andover 2
Brasília 2
Bratislava 2
Cambiano 2
Denver 2
Falls Church 2
Frankfurt am Main 2
Hefei 2
London 2
Phoenix 2
Warsaw 2
Ziano di Fiemme 2
Araguari 1
Asunción 1
Barinas 1
Belo Horizonte 1
Betim 1
Bismarck 1
Boston 1
Bremen 1
Calgary 1
Catania 1
Changsha 1
Ciudad Guayana 1
Cáceres 1
Dayton 1
Des Moines 1
Duque de Caxias 1
Edison 1
Edmonton 1
Elk Grove Village 1
Encarnación 1
Florianópolis 1
Fortaleza 1
Fremont 1
Goianira 1
Goiânia 1
Greensboro 1
Guangzhou 1
Guarulhos 1
Hanoi 1
Hurlingham 1
Itambé 1
Jacareí 1
Jeffersonville 1
Jiaxing 1
Johannesburg 1
Kansas City 1
Karbala 1
Kolkata 1
Lawrence 1
Luziânia 1
Manaus 1
Manchester 1
Mexico City 1
Mumbai 1
Nairobi 1
Nanjing 1
Totale 1.068
Nome #
Breakdown properties of multiguarded devices 141
Pd/Ge ohmic contacts for GaAs metal-semiconductor field effect transistors: technology and performance 131
Radiation effects on breakdown characteristics of multiguarded devices 126
Self-limitation of edge-generated currents in single-sided microstrip detectors after type inversion 126
Asymmetrical oxide-charge build-up in irradiated p-MOSFET's 125
Study of breakdown effects in silicon multiguard structures 124
Forward and reverse characteristics of irradiated MOSFET's 121
High voltage operation of silicon devices for LHC experiments 113
Multiguard structures for high voltage operation of radiation damaged silicon detectors 88
Optimisation of multiguard structures for breakdown protection in silicon detectors 85
Durability Against Ca(OH)2 Attack of Soda-Lime Glass Coated by Various 82
Continuous subcutaneous insulin infusion in Italy: Third national survey 66
A New Hardware/Software Platform and a New 1/E Neutron Source for Soft Error Studies: Testing FPGAs at the ISIS Facility 50
Nuclear physics midterm plan at Legnaro National Laboratories (LNL) 39
Totale 1.417
Categoria #
all - tutte 5.077
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.077


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202166 0 0 0 0 0 5 11 8 13 7 13 9
2021/202299 1 10 0 13 0 7 1 24 6 12 3 22
2022/2023173 17 7 1 23 23 31 0 19 23 2 12 15
2023/202467 4 3 9 3 8 28 1 2 0 2 3 4
2024/2025260 0 0 18 30 17 27 2 25 10 65 29 37
2025/2026335 74 14 84 78 79 6 0 0 0 0 0 0
Totale 1.417