Paccagnella, Alessandro

Paccagnella, Alessandro  

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Risultati 1 - 11 di 11 (tempo di esecuzione: 0.01 secondi).
Titolo Anno di pubblicazione Autori Unitn File
Asymmetrical oxide-charge build-up in irradiated p-MOSFET's 1-gen-1995 Paccagnella, AlessandroVerzellesi, GiovanniDalla Betta, Gian FrancoZEN, MARIOSoncini, Giovanni +
Breakdown properties of multiguarded devices 1-gen-1996 Dalla Betta, Gian FrancoPaccagnella, AlessandroSoncini, GiovanniVerzellesi, Giovanni +
Durability Against Ca(OH)2 Attack of Soda-Lime Glass Coated by Various 1-gen-1989 Carturan, GiovanniDella Mea, GianantonioPaccagnella, AlessandroSorarù, Gian Domenico +
Forward and reverse characteristics of irradiated MOSFET's 1-gen-1996 Paccagnella, AlessandroVerzellesi, GiovanniDalla Betta, Gian FrancoSoncini, Giovanni +
High voltage operation of silicon devices for LHC experiments 1-gen-1998 Dalla Betta, Gian FrancoPaccagnella, AlessandroVerzellesi, Giovanni +
Multiguard structures for high voltage operation of radiation damaged silicon detectors 1-gen-1999 Dalla Betta, Gian FrancoPaccagnella, AlessandroVerzellesi, Giovanni +
Optimisation of multiguard structures for breakdown protection in silicon detectors 1-gen-1998 Paccagnella, AlessandroDalla Betta, Gian FrancoVerzellesi, Giovanni +
Pd/Ge ohmic contacts for GaAs metal-semiconductor field effect transistors: technology and performance 1-gen-1990 Paccagnella, AlessandroDapor, Maurizio +
Radiation effects on breakdown characteristics of multiguarded devices 1-gen-1997 Paccagnella, AlessandroVerzellesi, GiovanniDalla Betta, Gian FrancoSoncini, Giovanni +
Self-limitation of edge-generated currents in single-sided microstrip detectors after type inversion 1-gen-1999 Verzellesi, GiovanniDalla Betta, Gian FrancoPignatel, Giorgio UmbertoPaccagnella, Alessandro +
Study of breakdown effects in silicon multiguard structures 1-gen-1999 Paccagnella, AlessandroDalla Betta, Gian FrancoVerzellesi, Giovanni +