This letter presents the experimental characterization and noise modeling of a CMOS avalanche photodiode with pwell/n-iso active junction fabricated in a 0.15-μm standard CMOS process. The device exhibits a remarkably low excess noise factor F = 6 at a gain M = 50 in the blue spectral region, and F = 12 at M = 50 in the near-infrared. Gain and noise characteristics are accurately predicted using Hayat dead-space model applied to a linearly graded junction doping profile.
Low-Noise Avalanche Photodiode With Graded Junction in 0.15-um CMOS Technology / Pancheri, Lucio; Dalla Betta, Gian Franco; Stoppa, David. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 35:5(2014), pp. 566-568. [10.1109/LED.2014.2312751]
Low-Noise Avalanche Photodiode With Graded Junction in 0.15-um CMOS Technology
Pancheri, Lucio;Dalla Betta, Gian Franco;Stoppa, David
2014-01-01
Abstract
This letter presents the experimental characterization and noise modeling of a CMOS avalanche photodiode with pwell/n-iso active junction fabricated in a 0.15-μm standard CMOS process. The device exhibits a remarkably low excess noise factor F = 6 at a gain M = 50 in the blue spectral region, and F = 12 at M = 50 in the near-infrared. Gain and noise characteristics are accurately predicted using Hayat dead-space model applied to a linearly graded junction doping profile.| File | Dimensione | Formato | |
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