We report on experimental results and TCAD simulations addressing the impact of layout on the electrical characteristics of double-sided 3D diodes fabricated at Fondazione Bruno Kessler (FBK), Trento, Italy. Simulations are found to accurately reproduce the device characteristics, thus explaining the basic mechanisms governing the breakdown behavior and capacitance of different devices and providing useful hints for layout optimization. © 2012 Elsevier B.V.
Impact of the layout on the electrical characteristics of double-sided silicon 3D sensors fabricated at FBK
Povoli, Marco;BOSCARDIN, MAURIZIO;Dalla Betta, Gian Franco;Mattedi, Francesca;
2013-01-01
Abstract
We report on experimental results and TCAD simulations addressing the impact of layout on the electrical characteristics of double-sided 3D diodes fabricated at Fondazione Bruno Kessler (FBK), Trento, Italy. Simulations are found to accurately reproduce the device characteristics, thus explaining the basic mechanisms governing the breakdown behavior and capacitance of different devices and providing useful hints for layout optimization. © 2012 Elsevier B.V.File in questo prodotto:
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