The optical properties of sputtered Cu2O thin films doped with the nitrogen concentrations between 1 and 2.5 at% have been investigated by spectrophotometric measurements. All the doped samples exhibit two clearly defined absorption bands at energies below the gap, with an intensity well correlated with the N concentration. This result suggests Cu2O as a promising material for the development of intermediate band solar cells, also considering the band gap of about 2 eV which is the optimal value for this kind of devices. Moreover, the sample with the highest doping shows a resistivity of View the MathML source, which is the lowest value ever reported for this semiconductor. As a collateral result, we provide a first estimation of the Relative Sensitivity Factors (RSF) of nitrogen and oxygen atoms under Cs+ bombardment in a Cu2O matrix.

Nitrogen doped Cu2O: A possible material for intermediate band solar cells?

Malerba, Claudia;Azanza Ricardo, Cristy Leonor;D'Incau, Mirco;Scardi, Paolo;
2012-01-01

Abstract

The optical properties of sputtered Cu2O thin films doped with the nitrogen concentrations between 1 and 2.5 at% have been investigated by spectrophotometric measurements. All the doped samples exhibit two clearly defined absorption bands at energies below the gap, with an intensity well correlated with the N concentration. This result suggests Cu2O as a promising material for the development of intermediate band solar cells, also considering the band gap of about 2 eV which is the optimal value for this kind of devices. Moreover, the sample with the highest doping shows a resistivity of View the MathML source, which is the lowest value ever reported for this semiconductor. As a collateral result, we provide a first estimation of the Relative Sensitivity Factors (RSF) of nitrogen and oxygen atoms under Cs+ bombardment in a Cu2O matrix.
2012
Malerba, Claudia; Azanza Ricardo, Cristy Leonor; D'Incau, Mirco; Biccari, F.; Scardi, Paolo; Mittiga, A.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11572/92890
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