The electroluminescence (EL) at 1.54 um of metal-oxide-semiconductor (MOS) capacitors with Er3+ ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared with that of erbium doped SiO2 layers. EL time-resolved measurements allowed us to distinguish between two different excitation mechanisms responsible for the Er3+ emission. Energy transfer from silicon nanoclusters (Si-ncs) to Er3+ is clearly observed at low-field AC excitation and increases with driving frequency. We demonstrate that sequential electron and hole injection at the edges of the pulses create excited states in Si-ncs which upon recombination, transfer their energy to Er3+ ions. On the contrary, direct impact excitation of Er3+ by hot injected carriers starts at Fowler-Nordheim injection threshold (above 5 MV/cm) and dominates for larger fields.

Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation

Anopchenko, Oleksiy;Marconi, Alessandro;Prtljaga, Nikola;Tengattini, Andrea;Pavesi, Lorenzo;
2012

Abstract

The electroluminescence (EL) at 1.54 um of metal-oxide-semiconductor (MOS) capacitors with Er3+ ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared with that of erbium doped SiO2 layers. EL time-resolved measurements allowed us to distinguish between two different excitation mechanisms responsible for the Er3+ emission. Energy transfer from silicon nanoclusters (Si-ncs) to Er3+ is clearly observed at low-field AC excitation and increases with driving frequency. We demonstrate that sequential electron and hole injection at the edges of the pulses create excited states in Si-ncs which upon recombination, transfer their energy to Er3+ ions. On the contrary, direct impact excitation of Er3+ by hot injected carriers starts at Fowler-Nordheim injection threshold (above 5 MV/cm) and dominates for larger fields.
J. M., Ramírez; F., Ferrarese Lupi; O., Jambois; Y., Berencén; D., Navarro Urrios; Anopchenko, Oleksiy; Marconi, Alessandro; Prtljaga, Nikola; Tengattini, Andrea; Pavesi, Lorenzo; Jean Phillippe, Colonna; J. M., Fedeli; B., Garrido
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11572/92458
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