The electroluminescence (EL) at 1.54 um of metal-oxide-semiconductor (MOS) capacitors with Er3+ ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared with that of erbium doped SiO2 layers. EL time-resolved measurements allowed us to distinguish between two different excitation mechanisms responsible for the Er3+ emission. Energy transfer from silicon nanoclusters (Si-ncs) to Er3+ is clearly observed at low-field AC excitation and increases with driving frequency. We demonstrate that sequential electron and hole injection at the edges of the pulses create excited states in Si-ncs which upon recombination, transfer their energy to Er3+ ions. On the contrary, direct impact excitation of Er3+ by hot injected carriers starts at Fowler-Nordheim injection threshold (above 5 MV/cm) and dominates for larger fields.
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Titolo: | Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation |
Autori: | J. M., Ramírez; F., Ferrarese Lupi; O., Jambois; Y., Berencén; D., Navarro Urrios; Anopchenko, Oleksiy; Marconi, Alessandro; Prtljaga, Nikola; Tengattini, Andrea; Pavesi, Lorenzo; Jean Phillippe, Colonna; J. M., Fedeli; B., Garrido |
Autori Unitn: | |
Titolo del periodico: | NANOTECHNOLOGY |
Anno di pubblicazione: | 2012 |
Codice identificativo Scopus: | 2-s2.0-84858378538 |
Codice identificativo ISI: | WOS:000301662400003 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1088/0957-4484/23/12/125203 |
Handle: | http://hdl.handle.net/11572/92458 |
Appare nelle tipologie: | 03.1 Articolo su rivista (Journal article) |
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