The effects of 30 keV N+ implantation in amorphous silicon carbide films deposited on silicon substrates by rf sputtering over a fluence range of 1 x 10(16)-2 x 10(17) ions cm-2, are studied by means of x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and infrared (IR) absorption techniques. The ion-induced modifications of these films have been investigated on the basis of the chemical state evolution of Si, C, and N (using XPS and AES) and on the basis of the vibrational features of the films components (using IR absorption). The results show that implanted N bonds Si selectively, substituting the C atoms in the silicon carbide, and the C substitution by N results in a composite layer of carbonitrides and free C. An ion-induced C transport has also been observed and correlations are established between the formation of silicon carbonitrides and the dynamical behavior of the C in the implanted layer. the latter appears as a superposition of (a) a chemically induced atomic redistribution, required by local stoichiometry and space-filling possibilities in an amorphous network, and (b) a radiation-induced redistribution, a mechanism that is prevailing at low-fluence implantation.

Chemical and compositional changes induced by N+ implantation in amorphous SiC films

Bonelli, Marco;Miotello, Antonio;
1993-01-01

Abstract

The effects of 30 keV N+ implantation in amorphous silicon carbide films deposited on silicon substrates by rf sputtering over a fluence range of 1 x 10(16)-2 x 10(17) ions cm-2, are studied by means of x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and infrared (IR) absorption techniques. The ion-induced modifications of these films have been investigated on the basis of the chemical state evolution of Si, C, and N (using XPS and AES) and on the basis of the vibrational features of the films components (using IR absorption). The results show that implanted N bonds Si selectively, substituting the C atoms in the silicon carbide, and the C substitution by N results in a composite layer of carbonitrides and free C. An ion-induced C transport has also been observed and correlations are established between the formation of silicon carbonitrides and the dynamical behavior of the C in the implanted layer. the latter appears as a superposition of (a) a chemically induced atomic redistribution, required by local stoichiometry and space-filling possibilities in an amorphous network, and (b) a radiation-induced redistribution, a mechanism that is prevailing at low-fluence implantation.
1993
n. 3
N., Laidani; Bonelli, Marco; Miotello, Antonio; L., Guzman; L., Calliari; M., Elena; R., Bertoncello; A., Glisenti; R., Capelletti; P., Ossi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11572/91753
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