The effects of 30 keV N+ implantation in amorphous silicon carbide films deposited on silicon substrates by rf sputtering over a fluence range of 1 x 10(16)-2 x 10(17) ions cm-2, are studied by means of x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and infrared (IR) absorption techniques. The ion-induced modifications of these films have been investigated on the basis of the chemical state evolution of Si, C, and N (using XPS and AES) and on the basis of the vibrational features of the films components (using IR absorption). The results show that implanted N bonds Si selectively, substituting the C atoms in the silicon carbide, and the C substitution by N results in a composite layer of carbonitrides and free C. An ion-induced C transport has also been observed and correlations are established between the formation of silicon carbonitrides and the dynamical behavior of the C in the implanted layer. the latter appears as a superposition of (a) a chemically induced atomic redistribution, required by local stoichiometry and space-filling possibilities in an amorphous network, and (b) a radiation-induced redistribution, a mechanism that is prevailing at low-fluence implantation.
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Titolo: | Chemical and compositional changes induced by N+ implantation in amorphous SiC films |
Autori: | N., Laidani; Bonelli, Marco; Miotello, Antonio; L., Guzman; L., Calliari; M., Elena; R., Bertoncello; A., Glisenti; R., Capelletti; P., Ossi |
Autori Unitn: | |
Titolo del periodico: | JOURNAL OF APPLIED PHYSICS |
Anno di pubblicazione: | 1993 |
Numero e parte del fascicolo: | n. 3 |
Codice identificativo Scopus: | 2-s2.0-0001476656 |
Codice identificativo ISI: | WOS:A1993LQ12700087 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.354764 |
Handle: | http://hdl.handle.net/11572/91753 |
Appare nelle tipologie: | 03.1 Articolo su rivista (Journal article) |