Nitrogen-implantation induced enhanced adhesion of amorphous SiC films deposited on stainless-steel and Cu

The effects of N+ implantation into SiC films deposited on stainless steel and Cu substrates were examined in connection with the adhesion properties of the SiC films. The films were deposited at 453 K by rf magnetron sputtering and N+ implantation of 1 X 10(16)-5 X 10(17) ions/cm2 Was done at room temperature at either 30 or 160 keV ion energy. Chemical characterization of the implanted bilayers, at the interface region, and compositional depth profiles were obtained by Auger electron spectroscopy. The adhesion of the films was examined using a scratch tester and scanning electron microscopy equipped with an energy dispersive spectroscopy microanalyzer. Microhardness measurements and indentation fracture toughness analysis were made on SiC films deposited on cemented tungsten carbide. In the SiC/Cu bilayers, an adhesion enhancement was found which is thought to be due to the higher fracture toughness of the ceramic film, induced by N implantation. In the SiC/steel bilayers, the mechanism for the increase in adhesion is attributed to the improved mechanical properties of the SiC film and to the enhanced interfacial bonding due to formation of Si-(N,C)-Cr complexes.