In this work, the potentiality of the N+-implantation to promote adhesion in WC1-x/Ti-6Al-4V bilayers has been investigated, The WC1-x firms were deposited by rf sputtering in Ar discharge. N+-implantations were performed at 160 keV with ion dose ranging from 5 x 10(15) to 2 x 10(17) N+/cm(2). The implantations have been carried out at two sample temperatures: 363 K and 423 K. Adhesion strength was measured by means of the scratch test in conjunction with scanning electron microscopy and energy dispersive spectrometry (EDS), Auger electron spectroscopy (AES), Rutherford backscattering spectrometry (RES) and X-ray diffraction (XRD) analyses were used to study the chemical, compositional and structural changes of the WC1-x/Ti-6Al-4V interface. As a general result, N+-implantation modifies the adhesion failure mechanism which from adhesive, before implantation becomes cohesive. The implantation temperature had a strong effect on the critical loads L(c). N+-imprantation at 423 K resulted in a slight increase of L(c), from 2N (unimplanted systems) to 5N for all ion doses. This weak improvement of the adhesion strength was associated with the particular interface processes which allowed C, but not W, mixing into the substrate. In this case, Ti-C bondings formed which contributed to the substrate embrittlement. When the implantations were carried out at 363 K, both C and W underwent mixing with Ti-6Al-4V: this favoured not only an interface composition grading but also a graded chemistry across the interface, with a strong increase of L(c) for low ion dose (L(c) = 14N for 1 x 10(16) N+/cm(2)). Implantation with higher doses (5 x 10(16) N+/cm(2) and 2 x 10(17) N+/cm(2)) exhibited lower efficiency (L(c) = 7N for 2 x 10(17) N+/cm(2)). This ion dose dependence of the adhesion strength was attributed to the formation of different phases across the interface, probably structurally incompatible.

N+-implantation induced enhanced adhesion in WC1-x/Ti-6Al-4V

Miotello, Antonio
1996-01-01

Abstract

In this work, the potentiality of the N+-implantation to promote adhesion in WC1-x/Ti-6Al-4V bilayers has been investigated, The WC1-x firms were deposited by rf sputtering in Ar discharge. N+-implantations were performed at 160 keV with ion dose ranging from 5 x 10(15) to 2 x 10(17) N+/cm(2). The implantations have been carried out at two sample temperatures: 363 K and 423 K. Adhesion strength was measured by means of the scratch test in conjunction with scanning electron microscopy and energy dispersive spectrometry (EDS), Auger electron spectroscopy (AES), Rutherford backscattering spectrometry (RES) and X-ray diffraction (XRD) analyses were used to study the chemical, compositional and structural changes of the WC1-x/Ti-6Al-4V interface. As a general result, N+-implantation modifies the adhesion failure mechanism which from adhesive, before implantation becomes cohesive. The implantation temperature had a strong effect on the critical loads L(c). N+-imprantation at 423 K resulted in a slight increase of L(c), from 2N (unimplanted systems) to 5N for all ion doses. This weak improvement of the adhesion strength was associated with the particular interface processes which allowed C, but not W, mixing into the substrate. In this case, Ti-C bondings formed which contributed to the substrate embrittlement. When the implantations were carried out at 363 K, both C and W underwent mixing with Ti-6Al-4V: this favoured not only an interface composition grading but also a graded chemistry across the interface, with a strong increase of L(c) for low ion dose (L(c) = 14N for 1 x 10(16) N+/cm(2)). Implantation with higher doses (5 x 10(16) N+/cm(2) and 2 x 10(17) N+/cm(2)) exhibited lower efficiency (L(c) = 7N for 2 x 10(17) N+/cm(2)). This ion dose dependence of the adhesion strength was attributed to the formation of different phases across the interface, probably structurally incompatible.
1996
n. 4
N., Laidani; C., Dorigoni; Miotello, Antonio
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11572/91705
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 4
social impact