The chemistry of oxygen bonding on the diamond surface is a rich area of surface science research. It is well known that different surface terminations lead to strong variation of the material work function. This effect in diamond assumes peculiar consequences. In fact the oxidized diamond surface is hydrophilic, due to the high work function it shows a positive electron affinity and it is non conductive. On the contrary hydrogenation completely changes the orientation of the surface dipoles, the surface becomes hydrophobic, the work function lowers leading to a negative electron affinity. In addition hydrogen induces subsurface carriers which render the diamond surface semiconducting. These distinctive electronic properties make the diamond surface very interesting for the fabrication of surface field effect transistors just playing with the oxygen/hydrogen chemistry. Hydrogenation is generally obtained during the diamond synthesis in plasma reactors. Differently, the diamond surface oxidation may be accomplished with different processes (wet chemistry, plasma, UV irradiation). The realization of electronic devices calls for a complete understanding of the carbon-oxygen interactions, their stability and their influence on the electronic properties of diamond. Aim of this work is to explore the properties of diamond surfaces oxidized with piranha mixture, with O(2) plasma and with UV irradiation in a pure O(2) atmosphere. Each of these oxidized surfaces were annealed in situ at different temperatures and analyzed with photoelectron spectroscopies. Decreases of the oxygen concentration obtained via thermal desorption are then correlated with variations of the electronic properties obtained from UPS analyses.

XPS and UPS in situ study of oxygen thermal desorption from nanocrystalline diamond surface oxidized by different process

Torrengo, Simona;Miotello, Antonio;Minati, Luca;
2011

Abstract

The chemistry of oxygen bonding on the diamond surface is a rich area of surface science research. It is well known that different surface terminations lead to strong variation of the material work function. This effect in diamond assumes peculiar consequences. In fact the oxidized diamond surface is hydrophilic, due to the high work function it shows a positive electron affinity and it is non conductive. On the contrary hydrogenation completely changes the orientation of the surface dipoles, the surface becomes hydrophobic, the work function lowers leading to a negative electron affinity. In addition hydrogen induces subsurface carriers which render the diamond surface semiconducting. These distinctive electronic properties make the diamond surface very interesting for the fabrication of surface field effect transistors just playing with the oxygen/hydrogen chemistry. Hydrogenation is generally obtained during the diamond synthesis in plasma reactors. Differently, the diamond surface oxidation may be accomplished with different processes (wet chemistry, plasma, UV irradiation). The realization of electronic devices calls for a complete understanding of the carbon-oxygen interactions, their stability and their influence on the electronic properties of diamond. Aim of this work is to explore the properties of diamond surfaces oxidized with piranha mixture, with O(2) plasma and with UV irradiation in a pure O(2) atmosphere. Each of these oxidized surfaces were annealed in situ at different temperatures and analyzed with photoelectron spectroscopies. Decreases of the oxygen concentration obtained via thermal desorption are then correlated with variations of the electronic properties obtained from UPS analyses.
G., Speranza; Torrengo, Simona; Miotello, Antonio; Minati, Luca; I., Bernagozzi; M., Ferrari; M., Dipalo; E., Kohn
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11572/89906
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