We report on further developments of our proposed design approach for a full in-pixel signal processing chain of deep N-well monolithic active pixel sensor, by exploiting the triple well option of a CMOS 130 nm process. Two different geometries of the collecting electrode (namely "Apsel 3T 1 M1" and "Apsel 3T1 M 2") was implemented to compare their charge collection efficiency. The results of the characterization of the various versions of pixel matrices with a pion beam of 120 GeV/c at the SPS H6 CERN facility will be presented. The performances of an "Apsel 3T1" chip irradiated with a dose up to 10 Mrad (Co60) was also measured. Comparison will be presented among the irradiated and the new chip showing the impact of radiation damages on tracking efficiencies. © 2010 Elsevier B.V. All rights reserved.
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing
Dalla Betta, Gian Franco;Soncini, Giovanni;Fontana, Giorgio;
2011-01-01
Abstract
We report on further developments of our proposed design approach for a full in-pixel signal processing chain of deep N-well monolithic active pixel sensor, by exploiting the triple well option of a CMOS 130 nm process. Two different geometries of the collecting electrode (namely "Apsel 3T 1 M1" and "Apsel 3T1 M 2") was implemented to compare their charge collection efficiency. The results of the characterization of the various versions of pixel matrices with a pion beam of 120 GeV/c at the SPS H6 CERN facility will be presented. The performances of an "Apsel 3T1" chip irradiated with a dose up to 10 Mrad (Co60) was also measured. Comparison will be presented among the irradiated and the new chip showing the impact of radiation damages on tracking efficiencies. © 2010 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
