A series of 100−x SiO2-xHfO2 planar waveguides 10x45 doped with 0.01 mol % Er3+ was prepared by a sol-gel route. The lifetime of the 4I13/2 level and the refractive index of the waveguides were measured. The magnetic dipole and electric dipole rates of the 4I13/2→4I15/2 transition were estimated as a function of the refractive index. The electric dipole transition rates were well reproduced by the real cavity model.

Evaluation of local field effect on the 4I 13/2 lifetimes in Er-doped silica-hafnia planar waveguides

Mattarelli, Maurizio;Montagna, Maurizio;
2007-01-01

Abstract

A series of 100−x SiO2-xHfO2 planar waveguides 10x45 doped with 0.01 mol % Er3+ was prepared by a sol-gel route. The lifetime of the 4I13/2 level and the refractive index of the waveguides were measured. The magnetic dipole and electric dipole rates of the 4I13/2→4I15/2 transition were estimated as a function of the refractive index. The electric dipole transition rates were well reproduced by the real cavity model.
2007
L., Zampedri; Mattarelli, Maurizio; Montagna, Maurizio; R. R., Gonçalves
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11572/69418
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