Optical gain in nanocrystalline silicon (nc-Si) using the variable stripe length method was discussed. The waveguides were produced by using magnetron sputtering of alternating layers of Si and SiO 2. The results show the presence of optical gain up to 50 cm -1 when high intensity pulsed excitation is used. It was also found that the presence of nc-Si is necessary to achieve gain in the waveguides.
Stimulated emission in nanocrystalline silicon superlattices
Cazzanelli, Massimo;Pavesi, Lorenzo
2003-01-01
Abstract
Optical gain in nanocrystalline silicon (nc-Si) using the variable stripe length method was discussed. The waveguides were produced by using magnetron sputtering of alternating layers of Si and SiO 2. The results show the presence of optical gain up to 50 cm -1 when high intensity pulsed excitation is used. It was also found that the presence of nc-Si is necessary to achieve gain in the waveguides.File in questo prodotto:
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