The fabrication and characterisation of LED structures made of Ge grown on Si substrates is reported. The structures are circular mesa of strained n-Ge etched down to an undoped buffer of Ge. The electroluminescence exhibit average power levels at 1.7 mm of 10 mW, many orders of magnitude larger than the nW previously reported. 3 individual mechanisms of emission are identified which can be used to interpret the results encountered in other publications. This work potentially opens the route for integrated source of light and photodetectors above 1.6 mm on Si with applications for lab-on-a-chip and healthcare. © 2011 Optical Society of America.
Direct band-gap electroluminescence from strained n-doped germanium diode / Velha, Philippe; Gallacher, Kevin; Dumas, Derek C.; Myronov, Maksym; Leadley, David R.; Paul, Douglas J.. - (2012), p. CW1L.7. (Intervento presentato al convegno CLEO: Science and Innovations, CLEO_SI 2012 tenutosi a San Jose, CA, usa nel 2012) [10.1364/cleo_si.2012.cw1l.7].
Direct band-gap electroluminescence from strained n-doped germanium diode
Philippe Velha
Primo
;Douglas J. Paul
2012-01-01
Abstract
The fabrication and characterisation of LED structures made of Ge grown on Si substrates is reported. The structures are circular mesa of strained n-Ge etched down to an undoped buffer of Ge. The electroluminescence exhibit average power levels at 1.7 mm of 10 mW, many orders of magnitude larger than the nW previously reported. 3 individual mechanisms of emission are identified which can be used to interpret the results encountered in other publications. This work potentially opens the route for integrated source of light and photodetectors above 1.6 mm on Si with applications for lab-on-a-chip and healthcare. © 2011 Optical Society of America.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione