Effect of increased pressure (up to 1.5 GPa) during annealing of Cz-Si on creation of thermal donors (at 720-1000 K) and visible luminescence (peaking at 1.7-2.2 eV for samples annealed at up to 1420 K) is reported. The observed phenomena are related to stress-stimulated oxygen clustering/precipitation in Cz-Si resulting in creation of specific defects.
Effect of annealing under uniform stress on photoluminescence, electrical and structural properties of silicon
Cazzanelli, Massimo;Pavesi, Lorenzo
1997-01-01
Abstract
Effect of increased pressure (up to 1.5 GPa) during annealing of Cz-Si on creation of thermal donors (at 720-1000 K) and visible luminescence (peaking at 1.7-2.2 eV for samples annealed at up to 1420 K) is reported. The observed phenomena are related to stress-stimulated oxygen clustering/precipitation in Cz-Si resulting in creation of specific defects.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
