Silicon oxynitride (SiON) is a low-loss and versatile material for linear and nonlinear photonics applications. Controlling the oxygen-to-nitrogen (O/N) ratio in SiON provides an effective way to engineer its optical and mechanical properties, making it a great platform for the investigation of on-chip optomechanical interactions, especially the stimulated Brillouin scattering (SBS). Here, we report the Brillouin nonlinearity characterization of a SiON platform with a specific O/N ratio (characterized by a refractive index of n = 1.65). First, we introduce this particular SiON platform with fabrication details. Subsequently, we discuss various techniques for the on-chip Brillouin nonlinearity characterizations. In particular, we focus on the intensity- modulated pump-probe lock-in amplifier technique, which enables ultra-sensitive characterization. Finally, we analyze the Brillouin nonlinearities of this SiON platform and compare them with other SiON platforms. This work underscores the potential of SiON for on-chip Brillouin-based applications. Moreover, it paves the way for Brillouin nonlinearity characterization across various material platforms.
Brillouin nonlinearity characterizations of a high refractive index silicon oxynitride platform [Invited] / Ye, Kaixuan; Keloth, Akshay; Klaver, Yvan; Baldazzi, Alessio; Piccoli, Gioele; Sanna, Matteo; Pavesi, Lorenzo; Ghulinyan, Mher; Marpaung, David. - In: OPTICAL MATERIALS EXPRESS. - ISSN 2159-3930. - 14:10(2024), pp. 2225-2238. [10.1364/ome.522184]
Brillouin nonlinearity characterizations of a high refractive index silicon oxynitride platform [Invited]
Baldazzi, Alessio;Piccoli, Gioele;Sanna, Matteo;Pavesi, Lorenzo;Ghulinyan, Mher;
2024-01-01
Abstract
Silicon oxynitride (SiON) is a low-loss and versatile material for linear and nonlinear photonics applications. Controlling the oxygen-to-nitrogen (O/N) ratio in SiON provides an effective way to engineer its optical and mechanical properties, making it a great platform for the investigation of on-chip optomechanical interactions, especially the stimulated Brillouin scattering (SBS). Here, we report the Brillouin nonlinearity characterization of a SiON platform with a specific O/N ratio (characterized by a refractive index of n = 1.65). First, we introduce this particular SiON platform with fabrication details. Subsequently, we discuss various techniques for the on-chip Brillouin nonlinearity characterizations. In particular, we focus on the intensity- modulated pump-probe lock-in amplifier technique, which enables ultra-sensitive characterization. Finally, we analyze the Brillouin nonlinearities of this SiON platform and compare them with other SiON platforms. This work underscores the potential of SiON for on-chip Brillouin-based applications. Moreover, it paves the way for Brillouin nonlinearity characterization across various material platforms.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione