A study was conducted on the size dependence of lifetime and absorption cross section of silicon (Si) nanocrystals embedded in SiO2. It was found that the passivation of nonradiative interface states by hydrogenation increased the lifetime. The lifetimes remain in the microsecond range regardless of the size and large cross sections were obtained for low pumping wavelengths.

Size dependence of lifetime and absorption cross section of Si nanocrystals embedded in SiO2

Pavesi, Lorenzo;Cazzanelli, Massimo
2003-01-01

Abstract

A study was conducted on the size dependence of lifetime and absorption cross section of silicon (Si) nanocrystals embedded in SiO2. It was found that the passivation of nonradiative interface states by hydrogenation increased the lifetime. The lifetimes remain in the microsecond range regardless of the size and large cross sections were obtained for low pumping wavelengths.
2003
10
C., Garcia; B., Garrido; P., Pellegrino; R., Ferre; J., Moreno; J., Morante; Pavesi, Lorenzo; Cazzanelli, Massimo
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11572/43224
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