We report on the application of defect-enhanced silicon waveguide photodiodes operating at 1550 nm as power monitors for use in photonic integrated circuits. In-line monitors of 250-μm length provide an efficiency of 97 mA/W by absorbing only 8% of the optical mode. The monitors were integrated onto micro-ring waveguide ports to provide measures of optical resonance characteristics and a feedback to a thermal resonance tuner. The suitability of these photodetectors for control of micro-ring resonators is demonstrated. © 2006 IEEE.
Monitoring and tuning micro-ring properties using defect-enhanced silicon photodiodes at 1550 nm / Logan, Dylan F; Velha, Philippe; Sorel, Marc; De La Rue, Richard M.; Jessop, Paul E.; Knights, Andrew P.. - In: IEEE PHOTONICS TECHNOLOGY LETTERS. - ISSN 1041-1135. - 24:4(2012), pp. 261-263. [10.1109/LPT.2011.2177453]
Monitoring and tuning micro-ring properties using defect-enhanced silicon photodiodes at 1550 nm
VELHA, PHILIPPESecondo
;
2012-01-01
Abstract
We report on the application of defect-enhanced silicon waveguide photodiodes operating at 1550 nm as power monitors for use in photonic integrated circuits. In-line monitors of 250-μm length provide an efficiency of 97 mA/W by absorbing only 8% of the optical mode. The monitors were integrated onto micro-ring waveguide ports to provide measures of optical resonance characteristics and a feedback to a thermal resonance tuner. The suitability of these photodetectors for control of micro-ring resonators is demonstrated. © 2006 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
