Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substrate are demonstrated at room temperature. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to recombination between the direct and indirect transitions, respectively. The emission wavelength can be tuned by around 4% through changing the current density through the device. The devices have potential applications in the fields of optical interconnects, gas sensing, and healthcare. © 2012 American Institute of Physics.
1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates / Gallacher, K; Velha, Philippe; Paul, D. J.; Cecchi, S.; Frigerio, J.; Chrastina, D.; Isella, G.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 101:21(2012), p. 211101. [10.1063/1.4767138]
1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates
VELHA, PHILIPPEPrimo
;
2012-01-01
Abstract
Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substrate are demonstrated at room temperature. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to recombination between the direct and indirect transitions, respectively. The emission wavelength can be tuned by around 4% through changing the current density through the device. The devices have potential applications in the fields of optical interconnects, gas sensing, and healthcare. © 2012 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
