Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substrate are demonstrated at room temperature. Electroluminescence characterisation demonstrates two peaks around 1.55 mu m and 1.8 mu m, which correspond to recombination between the direct and indirect transitions, respectively. The emission wavelength can be tuned by around 4% through changing the current density through the device. The devices have potential applications in the fields of optical interconnects, gas sensing, and healthcare. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767138]
1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates / Gallacher, K; Velha, Philippe; Paul, D. J.; Cecchi, S.; Frigerio, J.; Chrastina, D.; Isella, G.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 101:21(2012), p. 211101. [10.1063/1.4767138]
1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates
VELHA, PHILIPPEPrimo
;
2012-01-01
Abstract
Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substrate are demonstrated at room temperature. Electroluminescence characterisation demonstrates two peaks around 1.55 mu m and 1.8 mu m, which correspond to recombination between the direct and indirect transitions, respectively. The emission wavelength can be tuned by around 4% through changing the current density through the device. The devices have potential applications in the fields of optical interconnects, gas sensing, and healthcare. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767138]I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
