We describe the fabrication and characterization of a silicon waveguide resonant photodetector compatible with the optical-to-electrical conversion of wavelengths at, or around, 1550 nm. Sub-band responsivity is provided through the introduction of defects via inert self-implantation and subsequent annealing. The detector is located within a 20-μm radius silicon microring resonator. An 18-dB resonant enhancement in absorption coefficient and 12-dB enhancement in photocurrent were measured, leading to a resonant responsivity of approximately 39 mA/W at 20-V reverse bias. © 2006 IEEE.
Defect-enhanced silicon-on-insulator waveguide resonant photodetector with high sensitivity at 1.55 μm / Logan, Dylan F; Velha, Philippe; Sorel, Marc; De La Rue, R. i. c. h. a. r. d. M.; Knights, Andrew P.; Jessop, Paul E.. - In: IEEE PHOTONICS TECHNOLOGY LETTERS. - ISSN 1041-1135. - 22:20(2010), pp. 1530-1532. [10.1109/LPT.2010.2066963]
Defect-enhanced silicon-on-insulator waveguide resonant photodetector with high sensitivity at 1.55 μm
VELHA, PHILIPPESecondo
;
2010-01-01
Abstract
We describe the fabrication and characterization of a silicon waveguide resonant photodetector compatible with the optical-to-electrical conversion of wavelengths at, or around, 1550 nm. Sub-band responsivity is provided through the introduction of defects via inert self-implantation and subsequent annealing. The detector is located within a 20-μm radius silicon microring resonator. An 18-dB resonant enhancement in absorption coefficient and 12-dB enhancement in photocurrent were measured, leading to a resonant responsivity of approximately 39 mA/W at 20-V reverse bias. © 2006 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
