We demonstrate a method for the efficient modulation of optical wavelengths around 1550nm in silicon waveguides. The amplitude of a propagating signal is mediated via control of the charge state of indium centers, rather than using free-carriers alone as in the plasma-dispersion effect. A 1 à 1 switch formed of an integrated p-i-n junction in an indium-doped silicon on insulator (SOI) waveguide provides 'normally-off' silicon absorption of greater than 7 dB at zero bias. This loss is decreased to 2:8 dB with application of a 6 V applied reverse bias, with a power consumption of less than 1 μW. © 2011 Optical Society of America.
Charge state switching of deep levels for low-power optical modulation in silicon waveguides / Logan, D. F; Velha, Philippe; Sorel, M.; De La Rue, R. M.; Wojcik, G.; Goebel, A.; Jessop, P. E.; Knights, A. P.. - In: OPTICS LETTERS. - ISSN 0146-9592. - 36:19(2011), pp. 3717-3719. [10.1364/OL.36.003717]
Charge state switching of deep levels for low-power optical modulation in silicon waveguides
VELHA, PHILIPPESecondo
;
2011-01-01
Abstract
We demonstrate a method for the efficient modulation of optical wavelengths around 1550nm in silicon waveguides. The amplitude of a propagating signal is mediated via control of the charge state of indium centers, rather than using free-carriers alone as in the plasma-dispersion effect. A 1 à 1 switch formed of an integrated p-i-n junction in an indium-doped silicon on insulator (SOI) waveguide provides 'normally-off' silicon absorption of greater than 7 dB at zero bias. This loss is decreased to 2:8 dB with application of a 6 V applied reverse bias, with a power consumption of less than 1 μW. © 2011 Optical Society of America.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione