High purity ultrafine SiC powders have been produced from gas phase reactants (SiH4 C2H2) in a CO2 laser induced process.The flow reactor designed to operate with a medium power (10-50 W) continuous wave CO2 laser source is described. The mechanism of gas phase reactions involved has been investigated by means of on-line optical diagnostics. Powders produced have been characterized by means of conventional chemical and spectroscopic methods. The x-ray results point out a growth mechanism by coalescence i.e. whole islands move in the flame to take part in binary collisions analogously to that observed for particles produced by inert gas evaporation. © 1990, Materials Research Society. All rights reserved.
Laser synthesis and crystallographic characterization of ultrafine SiC powders
Ceccato, Riccardo;
1990-01-01
Abstract
High purity ultrafine SiC powders have been produced from gas phase reactants (SiH4 C2H2) in a CO2 laser induced process.The flow reactor designed to operate with a medium power (10-50 W) continuous wave CO2 laser source is described. The mechanism of gas phase reactions involved has been investigated by means of on-line optical diagnostics. Powders produced have been characterized by means of conventional chemical and spectroscopic methods. The x-ray results point out a growth mechanism by coalescence i.e. whole islands move in the flame to take part in binary collisions analogously to that observed for particles produced by inert gas evaporation. © 1990, Materials Research Society. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
