We formed (Si/SiO2)n multilayers with Si-layers thinner than 2 nm using CMOS processing. These samples give room temperature emission ranging from 650 to 1000 nm. The analysis of photoluminescence spectra and the decay dynamics identifies exciton recombination in quantum-confined low-dimensional silicon as the mechanism. (Si/SiO2)n multilayers in the central region of λ and λ/2 microcavities consisting of dielectric Bragg reflectors (DBRs) formed by λ/4 stacks of [SiO2/Si]n (n = 2-3) layers and a SiO2 spacer, show both enhancement and narrowing of the emission. The quality factor (Q) is higher for the λ-type cavity. Multilayers inside MOS capacitors (M = Al, Au) show electroluminescence bands ranging from the blue to the NIR. The main contribution to the electroluminescence is recombination of hot electrons in the Si-substrates. © 2001 Elsevier Science B.V.
Si/SiO2 multilayers and microcavities for LED applications
Cazzanelli, Massimo;Gaburro, Zeno;Pavesi, Lorenzo
2001-01-01
Abstract
We formed (Si/SiO2)n multilayers with Si-layers thinner than 2 nm using CMOS processing. These samples give room temperature emission ranging from 650 to 1000 nm. The analysis of photoluminescence spectra and the decay dynamics identifies exciton recombination in quantum-confined low-dimensional silicon as the mechanism. (Si/SiO2)n multilayers in the central region of λ and λ/2 microcavities consisting of dielectric Bragg reflectors (DBRs) formed by λ/4 stacks of [SiO2/Si]n (n = 2-3) layers and a SiO2 spacer, show both enhancement and narrowing of the emission. The quality factor (Q) is higher for the λ-type cavity. Multilayers inside MOS capacitors (M = Al, Au) show electroluminescence bands ranging from the blue to the NIR. The main contribution to the electroluminescence is recombination of hot electrons in the Si-substrates. © 2001 Elsevier Science B.V.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
