Silicon-rich oxide (SiOx, 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 degrees C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100 degrees C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy. (doi: 10.5562/cca1969)
Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method / Ristic, D; Ivanda, M; Furic, K; Chiasera, A; Moser, E; Ferrari, M. - In: CROATICA CHEMICA ACTA. - ISSN 0011-1643. - 85:1(2012), pp. 91-96. [10.5562/cca1969]
Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method
Chiasera A;
2012-01-01
Abstract
Silicon-rich oxide (SiOx, 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 degrees C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100 degrees C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy. (doi: 10.5562/cca1969)I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
