All Er3+ doped dielectric 1-D Photonic Band Gap Structure was fabricated by rf-sputtering technique. The structure was constituted by of twenty pairs of SiO2/TiO2 alternated layers doped with Er3+ ions. The scanning electron microscopy was used to check the morphology of the structure. Transmission measurements put in evidence the stop band in the range 1500 nm-1950 nm. The photoluminescence measurements were obtained by optically exciting the sample and detecting the emitted light in the 1.5 mu m region at different detection angles. Luminescence spectra and luminescence decay curves put in evidence that the presence of the stop band modify the emission features of the Er3+ ions.
Photonic band edge assisted spontaneous emission enhancement from all Era(3+) 1-D photonic band gap structure / Chiasera, A; Meroni, C; Varas, S; Valligatla, S; Scotognella, F; Boucher, Yg; Lukowiak, A; Zur, L; Righini, Gc; Ferrari, M. - In: OPTICAL MATERIALS. - ISSN 0925-3467. - 80:(2018), pp. 106-109. [10.1016/j.optmat.2018.04.034]
Photonic band edge assisted spontaneous emission enhancement from all Era(3+) 1-D photonic band gap structure
Chiasera A;
2018-01-01
Abstract
All Er3+ doped dielectric 1-D Photonic Band Gap Structure was fabricated by rf-sputtering technique. The structure was constituted by of twenty pairs of SiO2/TiO2 alternated layers doped with Er3+ ions. The scanning electron microscopy was used to check the morphology of the structure. Transmission measurements put in evidence the stop band in the range 1500 nm-1950 nm. The photoluminescence measurements were obtained by optically exciting the sample and detecting the emitted light in the 1.5 mu m region at different detection angles. Luminescence spectra and luminescence decay curves put in evidence that the presence of the stop band modify the emission features of the Er3+ ions.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione