Single-crystal cubic silicon carbide has attracted great attention for MEMS and electronic devices. However, current leakage at the SiC/Si junction at high temperatures and visible-light absorption of the Si substrate are main obstacles hindering the use of the platform in a broad range of applications. To solve these bottlenecks, we present a new platform of single crystal SiC on an electrically insulating and transparent substrate using an anodic bonding process. The SiC thin film was prepared on a 150 mm Si with a surface roughness of 7 nm using LPCVD. The SiC/Si wafer was bonded to a glass substrate and then the Si layer was completely removed through wafer polishing and wet etching. The bonded SiC/glass samples show a sharp bonding interface of less than 15 nm characterized using deep profile X-ray photoelectron spectroscopy, a strong bonding strength of approximately 20 MPa measured from the pulling test, and relatively high optical transparency in the visible range. The transferred SiC film also exhibited good conductivity and a relatively high temperature coefficient of resistance varying from -12000 to -20 000 ppm/K, which is desirable for thermal sensors. The biocompatibility of SiC/glass was also confirmed through mouse 3T3 fibroblasts cell-culturing experiments. Taking advantage of the superior electrical properties and biocompatibility of SiC, the developed SiC-on-glass platform offers unprecedented potentials for high-temperature electronics as well as bioapplications.

Single-Crystalline 3C-SiC anodically Bonded onto Glass: An Excellent Platform for High-Temperature Electronics and Bioapplications / Phan, H. -P.; Cheng, H. -H.; Dinh, T.; Wood, B.; Nguyen, T. -K.; Mu, F.; Kamble, H.; Vadivelu, R.; Walker, G.; Hold, L.; Iacopi, A.; Haylock, B.; Dao, D. V.; Lobino, M.; Suga, T.; Nguyen, N. -T.. - In: ACS APPLIED MATERIALS & INTERFACES. - ISSN 1944-8244. - 9:33(2017), pp. 27365-27371. [10.1021/acsami.7b06661]

Single-Crystalline 3C-SiC anodically Bonded onto Glass: An Excellent Platform for High-Temperature Electronics and Bioapplications

Lobino M.;
2017-01-01

Abstract

Single-crystal cubic silicon carbide has attracted great attention for MEMS and electronic devices. However, current leakage at the SiC/Si junction at high temperatures and visible-light absorption of the Si substrate are main obstacles hindering the use of the platform in a broad range of applications. To solve these bottlenecks, we present a new platform of single crystal SiC on an electrically insulating and transparent substrate using an anodic bonding process. The SiC thin film was prepared on a 150 mm Si with a surface roughness of 7 nm using LPCVD. The SiC/Si wafer was bonded to a glass substrate and then the Si layer was completely removed through wafer polishing and wet etching. The bonded SiC/glass samples show a sharp bonding interface of less than 15 nm characterized using deep profile X-ray photoelectron spectroscopy, a strong bonding strength of approximately 20 MPa measured from the pulling test, and relatively high optical transparency in the visible range. The transferred SiC film also exhibited good conductivity and a relatively high temperature coefficient of resistance varying from -12000 to -20 000 ppm/K, which is desirable for thermal sensors. The biocompatibility of SiC/glass was also confirmed through mouse 3T3 fibroblasts cell-culturing experiments. Taking advantage of the superior electrical properties and biocompatibility of SiC, the developed SiC-on-glass platform offers unprecedented potentials for high-temperature electronics as well as bioapplications.
2017
33
Phan, H. -P.; Cheng, H. -H.; Dinh, T.; Wood, B.; Nguyen, T. -K.; Mu, F.; Kamble, H.; Vadivelu, R.; Walker, G.; Hold, L.; Iacopi, A.; Haylock, B.; Dao, D. V.; Lobino, M.; Suga, T.; Nguyen, N. -T.
Single-Crystalline 3C-SiC anodically Bonded onto Glass: An Excellent Platform for High-Temperature Electronics and Bioapplications / Phan, H. -P.; Cheng, H. -H.; Dinh, T.; Wood, B.; Nguyen, T. -K.; Mu, F.; Kamble, H.; Vadivelu, R.; Walker, G.; Hold, L.; Iacopi, A.; Haylock, B.; Dao, D. V.; Lobino, M.; Suga, T.; Nguyen, N. -T.. - In: ACS APPLIED MATERIALS & INTERFACES. - ISSN 1944-8244. - 9:33(2017), pp. 27365-27371. [10.1021/acsami.7b06661]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11572/334408
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