Continuous-wave photoluminescence (PL) and time-resolved photoluminescence of gallium nitride layers grown by pulsed laser deposition are compared. The temperature dependence of the photoluminescence decay time and the PL-integrated intensity allows a determination of radiative and nonradiative time constants of GaN. We find that luminescence peaks centered at 3.360 and 3.305 eV at low temperature can be attributed to recombination of excitons localized at extended defects. The photoluminescence radiative lifetime at room temperature is on the order of tens of ns. © 1998 American Institute of Physics.
Photoluminescence of localized excitons in pulsed laser deposited GaN
Cazzanelli, Massimo;Pavesi, Lorenzo
1998-01-01
Abstract
Continuous-wave photoluminescence (PL) and time-resolved photoluminescence of gallium nitride layers grown by pulsed laser deposition are compared. The temperature dependence of the photoluminescence decay time and the PL-integrated intensity allows a determination of radiative and nonradiative time constants of GaN. We find that luminescence peaks centered at 3.360 and 3.305 eV at low temperature can be attributed to recombination of excitons localized at extended defects. The photoluminescence radiative lifetime at room temperature is on the order of tens of ns. © 1998 American Institute of Physics.File in questo prodotto:
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