We have recently demonstrated that the fast momentum relaxation due to electron-phonon scattering of hot electrons excited into the conduction band of GaAs leads to the formation of hot-electron ensembles spread over the Brillouin zone. In the present work, we study the energy relaxation of hot-electron ensembles in GaAs, by means of ab initio calculations and time-, energy-, and momentum-resolved spectroscopy. We theoretically show that when the temperature decreases, the energy relaxation time ascribed to electron-phonon interaction becomes faster than at ambient temperature and prove that this is indeed the case in the experimental results.
Energy relaxation mechanism of hot-electron ensembles in GaAs: Theoretical and experimental study of its temperature dependence / Sjakste, J.; Vast, N.; Barbarino, G.; Calandra, M.; Mauri, F.; Kanasaki, J.; Tanimura, H.; Tanimura, K.. - In: PHYSICAL REVIEW. B. - ISSN 2469-9969. - ELETTRONICO. - 97:6(2018), pp. 064302.1-064302.9. [10.1103/PhysRevB.97.064302]
Energy relaxation mechanism of hot-electron ensembles in GaAs: Theoretical and experimental study of its temperature dependence
Calandra M.;
2018-01-01
Abstract
We have recently demonstrated that the fast momentum relaxation due to electron-phonon scattering of hot electrons excited into the conduction band of GaAs leads to the formation of hot-electron ensembles spread over the Brillouin zone. In the present work, we study the energy relaxation of hot-electron ensembles in GaAs, by means of ab initio calculations and time-, energy-, and momentum-resolved spectroscopy. We theoretically show that when the temperature decreases, the energy relaxation time ascribed to electron-phonon interaction becomes faster than at ambient temperature and prove that this is indeed the case in the experimental results.File | Dimensione | Formato | |
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PhysRevB.97.064302.pdf
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