Dark count rate (DCR) increase in CMOS single-photon avalanche diodes (SPADs) exposed to a nonmonochromatic neutron source is modeled, taking into account the source spectrum and the geometry of the device under test. Experimental results from the characterization of SPADs fabricated in a 150-nm technology and irradiated with 1-MeV neutron equivalent fluences up to 10 11 cm 2 are found to be in good agreement with the theoretically calculated distribution of the nonionizing energy deposited in the device substrate.
Dark Count Rate Distribution in Neutron-Irradiated CMOS SPADs / Ratti, L.; Brogi, P.; Collazuol, G.; Dalla Betta, G. -F.; Ficorella, A.; Marrocchesi, P. S.; Pancheri, L.; Vacchi, C.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - ELETTRONICO. - 66:12(2019), pp. 5230-5237. [10.1109/TED.2019.2944482]
Dark Count Rate Distribution in Neutron-Irradiated CMOS SPADs
Dalla Betta G. -F.;Ficorella A.;Pancheri L.;
2019-01-01
Abstract
Dark count rate (DCR) increase in CMOS single-photon avalanche diodes (SPADs) exposed to a nonmonochromatic neutron source is modeled, taking into account the source spectrum and the geometry of the device under test. Experimental results from the characterization of SPADs fabricated in a 150-nm technology and irradiated with 1-MeV neutron equivalent fluences up to 10 11 cm 2 are found to be in good agreement with the theoretically calculated distribution of the nonionizing energy deposited in the device substrate.| File | Dimensione | Formato | |
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