We developed Cold Isostatic Joining (CIJ) which is an environmental friendly room temperature joining method. This technique extends cold sintering process to joining of glasses. By optimizing the CIJ conditions a shear stress (18 MPa) comparable to bulk fused silica was achieved. The technique surpasses other joining methods (e.g. adhesive bonding and brazing), because it is insensitive to thermal degradation. Unlike pressure-less silicate bonding, pressure assisted CIJ resulted in a thin joining interlayer (≈27 nm) which maintained its integrity after being heated up to 1000 °C. The in-line transmittance (92%) was identical to un-joined material over the full spectrum making the joining nearly undetectable. The mechanism of CIJ formation and joining were clarified using X-ray diffraction (XRD and pole figure), scanning electron microscopy (SEM) and in line transmittance measurements. The cold joining method could find applications in the field of optics and semiconductors for wafer and lens bonding.
Ultra-low energy joining: An invisible strong bond at room temperature / Ke, D., Jiang, A., Biesuz, M., Bortolotti, M., Taveri, G., Wang, X., Xu, M., Li, J., Feng, Y., Hu, C., Grasso, S.. - In: JOURNAL OF THE EUROPEAN CERAMIC SOCIETY. - ISSN 0955-2219. - 39:16(2019), pp. 5358-5363. [10.1016/j.jeurceramsoc.2019.08.004]
Ultra-low energy joining: An invisible strong bond at room temperature
Biesuz M.;Bortolotti M.;
2019-01-01
Abstract
We developed Cold Isostatic Joining (CIJ) which is an environmental friendly room temperature joining method. This technique extends cold sintering process to joining of glasses. By optimizing the CIJ conditions a shear stress (18 MPa) comparable to bulk fused silica was achieved. The technique surpasses other joining methods (e.g. adhesive bonding and brazing), because it is insensitive to thermal degradation. Unlike pressure-less silicate bonding, pressure assisted CIJ resulted in a thin joining interlayer (≈27 nm) which maintained its integrity after being heated up to 1000 °C. The in-line transmittance (92%) was identical to un-joined material over the full spectrum making the joining nearly undetectable. The mechanism of CIJ formation and joining were clarified using X-ray diffraction (XRD and pole figure), scanning electron microscopy (SEM) and in line transmittance measurements. The cold joining method could find applications in the field of optics and semiconductors for wafer and lens bonding.| File | Dimensione | Formato | |
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