A report on the light amplification dynamics of stimulated emission in silicon nanocrystals (Si-nc) was presented. Si-nc samples were produced by high-temperature annealing of substoichiometric silicon oxide (SiOx) thin films grown by plasma-enhanced chemical vapor deposition on a quartz substrate. The optical confinement factor of the wave-guide was estimated to be 74%.
Dynamics of stimulated emission in silicon nanocrystals
Cazzanelli, Massimo;Pavesi, Lorenzo;
2003-01-01
Abstract
A report on the light amplification dynamics of stimulated emission in silicon nanocrystals (Si-nc) was presented. Si-nc samples were produced by high-temperature annealing of substoichiometric silicon oxide (SiOx) thin films grown by plasma-enhanced chemical vapor deposition on a quartz substrate. The optical confinement factor of the wave-guide was estimated to be 74%.File in questo prodotto:
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