Herein,we report a memristive response fromPt/TiO2/Ta2O5/Pt stack thin filmswith lowSET and RESET voltages, and resistance ratio of 10^3. For the first time, Pt/TiO2/Ta2O5 stack thin films were produced by sol-gel procedure. The morphology and elemental composition of Pt/TiO2/Ta2O5 stacks were studied by a set of complementary techniques, including scanning electron microscopy (SEM), field-emission electron microscopy (FE-SEM), atomic forcemicroscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The thickness of thematerialwas estimated from the transmittance spectrum by Pointwise Unconstrained Optimization Approach (PUMA).
Towards low voltage resistive switch in sol-gel derived TiO2/Ta2O5 stack thin films / Prusakova, V., Collini, C., Lunelli, L., Vanzetti, L., Chiappini, A., Lorenzelli, L., Pederzolli, C., Chiasera, A., Ferrari, M., Dirè, S.. - In: MATERIALS & DESIGN. - ISSN 1873-4197. - STAMPA. - 2016:105(2016), pp. 359-365. [10.1016/j.matdes.2016.05.086]
Towards low voltage resistive switch in sol-gel derived TiO2/Ta2O5 stack thin films
Prusakova, Valentina;Chiasera, A.;Dirè, Sandra
2016-01-01
Abstract
Herein,we report a memristive response fromPt/TiO2/Ta2O5/Pt stack thin filmswith lowSET and RESET voltages, and resistance ratio of 10^3. For the first time, Pt/TiO2/Ta2O5 stack thin films were produced by sol-gel procedure. The morphology and elemental composition of Pt/TiO2/Ta2O5 stacks were studied by a set of complementary techniques, including scanning electron microscopy (SEM), field-emission electron microscopy (FE-SEM), atomic forcemicroscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The thickness of thematerialwas estimated from the transmittance spectrum by Pointwise Unconstrained Optimization Approach (PUMA).| File | Dimensione | Formato | |
|---|---|---|---|
|
Materials Design 2016.pdf
Solo gestori archivio
Tipologia:
Versione editoriale (Publisher’s layout)
Licenza:
Tutti i diritti riservati (All rights reserved)
Dimensione
1.25 MB
Formato
Adobe PDF
|
1.25 MB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
