Herein,we report a memristive response fromPt/TiO2/Ta2O5/Pt stack thin filmswith lowSET and RESET voltages, and resistance ratio of 10^3. For the first time, Pt/TiO2/Ta2O5 stack thin films were produced by sol-gel procedure. The morphology and elemental composition of Pt/TiO2/Ta2O5 stacks were studied by a set of complementary techniques, including scanning electron microscopy (SEM), field-emission electron microscopy (FE-SEM), atomic forcemicroscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The thickness of thematerialwas estimated from the transmittance spectrum by Pointwise Unconstrained Optimization Approach (PUMA).
Towards low voltage resistive switch in sol-gel derived TiO2/Ta2O5 stack thin films / Prusakova, Valentina; Collini, C.; Lunelli, L.; Vanzetti, L.; Chiappini, A.; Lorenzelli, L.; Pederzolli, C.; Chiasera, A.; Ferrari, M.; Dirè, Sandra. - In: MATERIALS & DESIGN. - ISSN 1873-4197. - STAMPA. - 2016:105(2016), pp. 359-365. [10.1016/j.matdes.2016.05.086]
Towards low voltage resistive switch in sol-gel derived TiO2/Ta2O5 stack thin films
Prusakova, Valentina;Chiasera, A.;Dirè, Sandra
2016-01-01
Abstract
Herein,we report a memristive response fromPt/TiO2/Ta2O5/Pt stack thin filmswith lowSET and RESET voltages, and resistance ratio of 10^3. For the first time, Pt/TiO2/Ta2O5 stack thin films were produced by sol-gel procedure. The morphology and elemental composition of Pt/TiO2/Ta2O5 stacks were studied by a set of complementary techniques, including scanning electron microscopy (SEM), field-emission electron microscopy (FE-SEM), atomic forcemicroscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The thickness of thematerialwas estimated from the transmittance spectrum by Pointwise Unconstrained Optimization Approach (PUMA).| File | Dimensione | Formato | |
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