In this paper, we report on the characterization of silicon 3D and planar sensors, coupled with different neutron converter materials, such as mB, B-10, (B4C)-B-10 and (LiF)-Li-6, with different deposition thickness. Selected results from the electrical and functional characterization of the devices are shown and comparatively discussed with the aid of SRIM and Gean1.4 simulations.The limited neutron detection efficiency, on the order of similar or equal to 1% (planar) and similar or equal to 8% (3D) from simulations, is understood, and hints for the optimization of the devices have been derived. (C) 2015 Elsevier B.V. All rights reserved.
Characterization of 3D and planar Si diodes with different neutron converter materials / Mendicino, R., Boscardin, M., Quaranta, A., Dalla Betta, G.F., Dalla Palma, M., Maggioni, G., Quaranta, A., Ronchin, S.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 796:(2015), pp. 23-28. [10.1016/j.nima.2015.04.026]
Characterization of 3D and planar Si diodes with different neutron converter materials
Mendicino, Roberto;Quaranta, Alberto;Dalla Betta, Gian Franco;Dalla Palma, Matteo;
2015-01-01
Abstract
In this paper, we report on the characterization of silicon 3D and planar sensors, coupled with different neutron converter materials, such as mB, B-10, (B4C)-B-10 and (LiF)-Li-6, with different deposition thickness. Selected results from the electrical and functional characterization of the devices are shown and comparatively discussed with the aid of SRIM and Gean1.4 simulations.The limited neutron detection efficiency, on the order of similar or equal to 1% (planar) and similar or equal to 8% (3D) from simulations, is understood, and hints for the optimization of the devices have been derived. (C) 2015 Elsevier B.V. All rights reserved.| File | Dimensione | Formato | |
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