Photoluminescence (PL) from Si nanocrystals (NCs) excited by two-photon absorption (TPA) has been observed in Si nanocrystal-based waveguides fabricated by plasma enhanced chemical vapor deposition. The TPA excited photoluminescence emission resembles the one-photon excited photoluminescence arising from inter-band transitions in the quantum confined Si nanocrystals. By measuring the non-linear transmission of waveguides, a large TPA coefficient of β up to 10−8 cm/W has been measured at 1550 nm. These values of β depend on the Si NCs size and are two orders of magnitude larger than the bulk silicon value. Here, we propose to use the TPA excited visible PL emission as a tool to map the spatial intensity profile of the 1550 nm propagating optical modes in multimode waveguides. In this way, multimode interference has been revealed experimentally and confirmed through a finite element simulation. © 2015 AIP Publishing LLC

Multi-mode interference revealed by two photon absorption in silicon rich SiO2 waveguides / S., Manna; Ramiro Manzano, Fernando; Ghulinyan, Mher; Mancinelli, Mattia; Turri, Fabio; G., Pucker; Pavesi, Lorenzo. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 2015, 106:7(2015), pp. 071109.1-071109.9. [10.1063/1.4913440]

Multi-mode interference revealed by two photon absorption in silicon rich SiO2 waveguides

Ramiro Manzano, Fernando;Ghulinyan, Mher;Mancinelli, Mattia;Turri, Fabio;Pavesi, Lorenzo
2015

Abstract

Photoluminescence (PL) from Si nanocrystals (NCs) excited by two-photon absorption (TPA) has been observed in Si nanocrystal-based waveguides fabricated by plasma enhanced chemical vapor deposition. The TPA excited photoluminescence emission resembles the one-photon excited photoluminescence arising from inter-band transitions in the quantum confined Si nanocrystals. By measuring the non-linear transmission of waveguides, a large TPA coefficient of β up to 10−8 cm/W has been measured at 1550 nm. These values of β depend on the Si NCs size and are two orders of magnitude larger than the bulk silicon value. Here, we propose to use the TPA excited visible PL emission as a tool to map the spatial intensity profile of the 1550 nm propagating optical modes in multimode waveguides. In this way, multimode interference has been revealed experimentally and confirmed through a finite element simulation. © 2015 AIP Publishing LLC
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S., Manna; Ramiro Manzano, Fernando; Ghulinyan, Mher; Mancinelli, Mattia; Turri, Fabio; G., Pucker; Pavesi, Lorenzo
Multi-mode interference revealed by two photon absorption in silicon rich SiO2 waveguides / S., Manna; Ramiro Manzano, Fernando; Ghulinyan, Mher; Mancinelli, Mattia; Turri, Fabio; G., Pucker; Pavesi, Lorenzo. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 2015, 106:7(2015), pp. 071109.1-071109.9. [10.1063/1.4913440]
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11572/101792
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