3D active edge sensors have advantages such as radiation hardness and edgeless capability. With the use of deep reactive ion etching and wafer bonding, 18.5 by 20.5 mm2 3D detectors with active edges have been successfully fabricated at SINTEF MiNaLab. These sensors are compatible with the ATLAS FE-I4 readout electronics. Fabrication process and difficulties are presented and the preliminary electrical measurements are also discussed. © 2011 IEEE.

Results from the first prototype of large 3D active edge sensors

Dalla Betta, Gian Franco;
2011-01-01

Abstract

3D active edge sensors have advantages such as radiation hardness and edgeless capability. With the use of deep reactive ion etching and wafer bonding, 18.5 by 20.5 mm2 3D detectors with active edges have been successfully fabricated at SINTEF MiNaLab. These sensors are compatible with the ATLAS FE-I4 readout electronics. Fabrication process and difficulties are presented and the preliminary electrical measurements are also discussed. © 2011 IEEE.
2011
Conference Record of 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference
Piscataway, NJ, USA
Institute of Electrical and Electronics Engineers Inc.
9781467301183
A., Kok; T. E., Hansen; M., Boscardin; Dalla Betta, Gian Franco; C., Da Via; G., Darbo; M., Lozano; J., Hasi; C., Kenney; N., Lietaer; S. I., Parker; ...espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11572/89818
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