This paper presents the design and the analysis of Single-Pole-Single-Throw (SPST) switches based on Micro- Electro-Mechanical-Systems technology for Radio Frequencies applications (RF-MEMS). The switches are of series ohmic type, and they are framed within a coplanar waveguide (CPW) configuration. The proposed switches are provided with meandershaped suspending beams, targeting a reduced actuation voltage and a design minimally subjected to nonidealities, such as deformations due to residual stress built within thin-films during the fabrication process. This design arrangement allowed the devices to demonstrate a simulated actuation voltage in the 4-8 V range, and an actuation time in the range of 10-20 μs. In terms of electrical features, the devices have been simulated up to 60 GHz, exhibiting a < -2 dB Insertion Loss up t o 3 7 GHz, and < -9 dB Return Loss along the whole range. The electro-mechanical properties of the switches have been investigated by means of Ansys Workbench, while its RF electrical performances have been assessed by Ansys HFSS.
Design and Analysis of RF - MEMS Switches with Meandered Beams for Reduced Actuation Voltage / Tagliapietra, G.; Iannacci, J.. - 2021-:(2021), pp. 181-184. (Intervento presentato al convegno 32nd IEEE International Conference on Microelectronics, MIEL 2021 tenutosi a Nis, Serbia nel 12-14 September 2021) [10.1109/MIEL52794.2021.9569074].
Design and Analysis of RF - MEMS Switches with Meandered Beams for Reduced Actuation Voltage
Tagliapietra, G.
;Iannacci, J.
2021-01-01
Abstract
This paper presents the design and the analysis of Single-Pole-Single-Throw (SPST) switches based on Micro- Electro-Mechanical-Systems technology for Radio Frequencies applications (RF-MEMS). The switches are of series ohmic type, and they are framed within a coplanar waveguide (CPW) configuration. The proposed switches are provided with meandershaped suspending beams, targeting a reduced actuation voltage and a design minimally subjected to nonidealities, such as deformations due to residual stress built within thin-films during the fabrication process. This design arrangement allowed the devices to demonstrate a simulated actuation voltage in the 4-8 V range, and an actuation time in the range of 10-20 μs. In terms of electrical features, the devices have been simulated up to 60 GHz, exhibiting a < -2 dB Insertion Loss up t o 3 7 GHz, and < -9 dB Return Loss along the whole range. The electro-mechanical properties of the switches have been investigated by means of Ansys Workbench, while its RF electrical performances have been assessed by Ansys HFSS.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione