LEDs are reported from Ge-on-Si in which process induced strain has increased the emission wavelength. The direct bandgap electroluminescence emits up to ⠼ μW of power between 1.6 μm and ⠼1.8 μm, significantly larger than previous LEDs. © 2012 IEEE.
Tuning the electroluminescence of n-Ge LEDs using process induced strain / Velha, Philippe; Gallacher, Kevin; Dumas, Derek; Paul, Douglas J.; Myronov, Maksym; Leadley, David R.. - (2012), pp. 337-339. (Intervento presentato al convegno 2012 IEEE 9th International Conference on Group IV Photonics, GFP 2012 tenutosi a San Diego, CA, usa nel 2012) [10.1109/GROUP4.2012.6324179].
Tuning the electroluminescence of n-Ge LEDs using process induced strain
VELHA, PHILIPPEPrimo
;
2012-01-01
Abstract
LEDs are reported from Ge-on-Si in which process induced strain has increased the emission wavelength. The direct bandgap electroluminescence emits up to ⠼ μW of power between 1.6 μm and ⠼1.8 μm, significantly larger than previous LEDs. © 2012 IEEE.File in questo prodotto:
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