Electroluminescence from strained n-Ge quantum wells LEDs on Si 0.05Ge0.95 are demonstrated. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to transitions between the direct and indirect transitions respectively. © 2012 IEEE.
1.55 μm electroluminescence from strained n-Ge quantum wells on silicon substrates / Gallacher, K., Velha, P., Paul, D.J., Frigerio, J., Chrastina, D., Isella, G.. - (2012), pp. 81-83. (2012 IEEE 9th International Conference on Group IV Photonics, GFP 2012 San Diego, CA, usa 2012) [10.1109/GROUP4.2012.6324093].
1.55 μm electroluminescence from strained n-Ge quantum wells on silicon substrates
VELHA, PHILIPPESecondo
;
2012-01-01
Abstract
Electroluminescence from strained n-Ge quantum wells LEDs on Si 0.05Ge0.95 are demonstrated. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to transitions between the direct and indirect transitions respectively. © 2012 IEEE.File in questo prodotto:
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