Electroluminescence from strained n-Ge quantum wells LEDs on Si 0.05Ge0.95 are demonstrated. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to transitions between the direct and indirect transitions respectively. © 2012 IEEE.
1.55 μm electroluminescence from strained n-Ge quantum wells on silicon substrates / Gallacher, Kevin; Velha, Philippe; Paul, Douglas J.; Frigerio, Jacopo; Chrastina, Danny; Isella, Giovanni. - (2012), pp. 81-83. (Intervento presentato al convegno 2012 IEEE 9th International Conference on Group IV Photonics, GFP 2012 tenutosi a San Diego, CA, usa nel 2012) [10.1109/GROUP4.2012.6324093].
1.55 μm electroluminescence from strained n-Ge quantum wells on silicon substrates
VELHA, PHILIPPESecondo
;
2012-01-01
Abstract
Electroluminescence from strained n-Ge quantum wells LEDs on Si 0.05Ge0.95 are demonstrated. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to transitions between the direct and indirect transitions respectively. © 2012 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
