The fabrication and characterisation of light emitting diode (LED) structures made of Ge grown on Si substrates is reported. The structures are circular mesa of strained n-Ge etched down to an undoped buffer of Ge. The electroluminescence exhibit average power levels at 1.7 mu m of a few mu W, many orders of magnitude larger than the nW previously reported. Three individual mechanisms of emission are identified which can be used to interpret the results encountered in other publications. This work potentially opens the route for integrated source of light and photo-detectors above 1.6 mu m on Si with applications for lab-on-a-chip and healthcare.
Direct band-gap electroluminescence from strained n-Ge light emitting diodes / Velha, P., Gallacher, K., Dumas, D., Paul, D.J., Myronov, M., Leadley, D.R.. - In: ECS TRANSACTIONS. - ISSN 1938-5862. - 50:9(2012), pp. 305-308. (5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting Honolulu, HI, usa 2012) [10.1149/05009.0305ecst].
Direct band-gap electroluminescence from strained n-Ge light emitting diodes
VELHA, PHILIPPEPrimo
;
2012-01-01
Abstract
The fabrication and characterisation of light emitting diode (LED) structures made of Ge grown on Si substrates is reported. The structures are circular mesa of strained n-Ge etched down to an undoped buffer of Ge. The electroluminescence exhibit average power levels at 1.7 mu m of a few mu W, many orders of magnitude larger than the nW previously reported. Three individual mechanisms of emission are identified which can be used to interpret the results encountered in other publications. This work potentially opens the route for integrated source of light and photo-detectors above 1.6 mu m on Si with applications for lab-on-a-chip and healthcare.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
