The photoluminescence of tensile strained germanium nanostructures is reported. Sub-micron gratings and pillars were fabricated before being embedded in strained silicon nitride films. Using different deposition conditions and different sizes of structures, the stress in the nanostructures can be controlled. The measured optical properties of the samples show that the direct band-gap is shifted drastically towards higher wavelength to over 1.9 μm wavelength. This process of local control of the stress in germanium nanostructures is compatible with integrated photonic devices in waveguides geometry. This work opens the route towards emitters and photo-detectors above 1.6 μm wavelength integrated on silicon substrates which are not presently available. © The Electrochemical Society.
Long wavelength >1.9 μm Germanium for optoelectronics using process induced strain / Velha, Philippe; Gallacher, K.; Dumas, D.; Paul, D. J.; Myronov, M.; Leadley, D. R.. - In: ECS TRANSACTIONS. - ISSN 1938-5862. - 50:9(2012), pp. 779-782. (Intervento presentato al convegno 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting tenutosi a Honolulu, HI, usa nel 2012) [10.1149/05009.0779ecst].
Long wavelength >1.9 μm Germanium for optoelectronics using process induced strain
VELHA, PHILIPPEPrimo
;
2012-01-01
Abstract
The photoluminescence of tensile strained germanium nanostructures is reported. Sub-micron gratings and pillars were fabricated before being embedded in strained silicon nitride films. Using different deposition conditions and different sizes of structures, the stress in the nanostructures can be controlled. The measured optical properties of the samples show that the direct band-gap is shifted drastically towards higher wavelength to over 1.9 μm wavelength. This process of local control of the stress in germanium nanostructures is compatible with integrated photonic devices in waveguides geometry. This work opens the route towards emitters and photo-detectors above 1.6 μm wavelength integrated on silicon substrates which are not presently available. © The Electrochemical Society.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
