We present the design modelling and fabrication of Silicon-On-Insulator (SOI) nanobeam cavities that are immersed in a microfluidic system for refractive index sensing. The device has sensitivity value of greater than 200 nm/RIU with a Q-factor more than 20 000 in water. It was fabricated on a SOI platform and working at telecom wavelengths. The use of the SOI platform also offers further possibilities of integration with CMOS technologies. © 2012 SPIE.
Silicon-On-Insulator (SOI) nanobeam optical cavities for refractive index based sensing / Rahman, M. Ghazali A; Velha, Philippe; De La Rue, Richard M.; Johnson, Nigel P.. - 8439:(2012), p. 84391Q. (Intervento presentato al convegno Optical Sensing and Detection II tenutosi a Brussels, bel nel 2012) [10.1117/12.922554].
Silicon-On-Insulator (SOI) nanobeam optical cavities for refractive index based sensing
VELHA, PHILIPPESecondo
;
2012-01-01
Abstract
We present the design modelling and fabrication of Silicon-On-Insulator (SOI) nanobeam cavities that are immersed in a microfluidic system for refractive index sensing. The device has sensitivity value of greater than 200 nm/RIU with a Q-factor more than 20 000 in water. It was fabricated on a SOI platform and working at telecom wavelengths. The use of the SOI platform also offers further possibilities of integration with CMOS technologies. © 2012 SPIE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
