The photoluminescence of process-induced tensile strained nanostructures fabricated using Ge on Si is reported. 100 nm pillars were etched and embedded in a silicon nitride thin film demonstrating photoluminescence emission up to ∼2.5 μm. © 2013 IEEE.
Strained germanium nanostructures on silicon emitting at >2.2 um wavelength / Velha, Philippe; Dumas, Derek C.; Gallacher, Kevin; Millar, Ross; Myronov, Maksym; Leadley, David R.; Paul, Douglas J.. - (2013), pp. 142-143. ( 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013 Seoul, korea 2013) [10.1109/Group4.2013.6644411].
Strained germanium nanostructures on silicon emitting at >2.2 um wavelength
VELHA, PHILIPPEPrimo
;
2013-01-01
Abstract
The photoluminescence of process-induced tensile strained nanostructures fabricated using Ge on Si is reported. 100 nm pillars were etched and embedded in a silicon nitride thin film demonstrating photoluminescence emission up to ∼2.5 μm. © 2013 IEEE.File in questo prodotto:
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