A new n-Ge Ohmic contact scheme is demonstrated using a three stage deposition of Ni, Ge and Ni. The lowest specific contact resistivity demonstrated was (1.68 ± 0.4) x 10-7 Ω-cm2, with a low transfer length of (0.95 0.12) for deposited Ni and Ge annealed at 340 oC for 30 s on n-Ge with a doping density of 3 x 1019 cm -3. © The Electrochemical Society.
Low specific ohmic contacts to n-type germanium using a low temperature NiGe process / Gallacher, K.; Velha, Philippe; Paul, D. J.; Maclaren, I.; Myronov, M.; Leadley, D. R.. - In: ECS TRANSACTIONS. - ISSN 1938-5862. - 50:9(2012), pp. 1081-1084. (Intervento presentato al convegno 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting tenutosi a Honolulu, HI, usa nel 2012) [10.1149/05009.1081ecst].
Low specific ohmic contacts to n-type germanium using a low temperature NiGe process
VELHA, PHILIPPESecondo
;
2012-01-01
Abstract
A new n-Ge Ohmic contact scheme is demonstrated using a three stage deposition of Ni, Ge and Ni. The lowest specific contact resistivity demonstrated was (1.68 ± 0.4) x 10-7 Ω-cm2, with a low transfer length of (0.95 0.12) for deposited Ni and Ge annealed at 340 oC for 30 s on n-Ge with a doping density of 3 x 1019 cm -3. © The Electrochemical Society.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
