The design, modeling, fabrication, and experimental measurements on optical nanobeam cavities that change resonant frequency in response to changes in the refractive index of the surrounding environment are presented. Nanobeam cavities based on Silicon-On-Insulator (SOI) that work at telecommunication wavelengths (1550 nm) provide an ideal platform for label-free sensing, due to their features of high resonance Q-factors, high sensitivity and capability for integration with silicon CMOS. © 2013 SPIE.
High-Q optical nanobeam cavities for label-free sensing / M., Ghazali A. Rahman; Velha, Philippe; De La Rue, Richard M.; Johnson, Nigel P.. - 8774:(2013), p. 87740G. (Intervento presentato al convegno Optical Sensors 2013 tenutosi a Prague, Czech Republic nel 2013) [10.1117/12.2017696].
High-Q optical nanobeam cavities for label-free sensing
VELHA, PHILIPPESecondo
;
2013-01-01
Abstract
The design, modeling, fabrication, and experimental measurements on optical nanobeam cavities that change resonant frequency in response to changes in the refractive index of the surrounding environment are presented. Nanobeam cavities based on Silicon-On-Insulator (SOI) that work at telecommunication wavelengths (1550 nm) provide an ideal platform for label-free sensing, due to their features of high resonance Q-factors, high sensitivity and capability for integration with silicon CMOS. © 2013 SPIE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
