Nanobeam cavities based on Silicon-On-Insulator (SOI) working at telecommunication wavelengths (1550 nm) provide an ideal platform to use for label free sensing due to their features of high Qs, high sensitivity and capability for CMOS integration. We present some recent results showing the design modeling, fabrication, and experimental measurement of optical nanobeam cavities that work in air and show their sensitivity to the protein BSA.
Progress in high Q optical nanobeam cavities for label-free sensing / Rahman, M. Ghazali A.; Velha, Philippe; De La Rue, Richard M.; Johnson, Nigel P.. - 2015-:(2015), pp. 1-3. (Intervento presentato al convegno 17th International Conference on Transparent Optical Networks, ICTON 2015 tenutosi a Danubius Thermal Hotel Helia, hun nel 2015) [10.1109/ICTON.2015.7193696].
Progress in high Q optical nanobeam cavities for label-free sensing
VELHA, PHILIPPESecondo
;
2015-01-01
Abstract
Nanobeam cavities based on Silicon-On-Insulator (SOI) working at telecommunication wavelengths (1550 nm) provide an ideal platform to use for label free sensing due to their features of high Qs, high sensitivity and capability for CMOS integration. We present some recent results showing the design modeling, fabrication, and experimental measurement of optical nanobeam cavities that work in air and show their sensitivity to the protein BSA.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
